Tailoring of magnetic anisotropy by ion irradiation for magnetic tunnel junction sensors

Mahendra, Anmol; Gupta, Prasanth; Granville, S.; Kennedy, J.

doi:10.1016/j.jallcom.2022.164902

Cited by 14 publications

(12 citation statements)

References 185 publications

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“…This same result is also observed for the irradiated samples, providing evidence that the easy axis remains stable despite a decrease in the magnetization. The H//c measurement for the irradiated sample (figure 2(b)) shows a large bifurcation between the FC and ZFC curves at low temperatures (T < 30 K) that is not present in the pristine magnetization (figure 2(a)), suggesting alterations to the magnetic anisotropy of irradiated CST, potentially due to the change in the magnetic exchange coupling upon proton radiation [27][28][29][30]. In contrast, the H//ab magnetization data is similar in both samples, indicating that the applied field is too small to accurately detect any anisotropic effects in this direction, although this observation may also be due to the spin glass behavior.…”

Section: Resultsmentioning

confidence: 99%

Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr₂Si₂Te₆ magnet

Iturriaga,

Chen,

Yang

et al. 2024

J. Phys.: Condens. Matter

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The discovery of long-range magnetic ordering in atomically thin materials catapulted the van der Waals (vdW) family of compounds into an unprecedented popularity, leading to potentially important technological applications in magnetic storage and magneto-transport devices, as well as photoelectric sensors. With the potential for the use of vdW materials in space exploration technologies it is critical to understand how the properties of such materials are affected by ionizing proton irradiation. Owing to their robust intra-layer stability and sensitivity to external perturbations, these materials also provide excellent opportunities for studying proton irradiation as a non-destructive tool for controlling their magnetic properties. Specifically, the exfoliable Cr2Si2Te6 (CST) is a ferromagnetic semiconductor with the Curie temperature (TC) of ~32 K. Here, we have investigated the magnetic properties of CST upon proton irradiation as a function of fluence (1 x 1015, 5 x 1015, 1 x 1016, 5 x 1016, and 1 x 1018 H+/cm2) by employing variable-temperature, variable-field magnetization measurements, and detail how the magnetization, magnetic anisotropy vary as a function of proton fluence across the magnetic phase transition. While the TC remains constant as a function of proton fluence, we observed that the saturation magnetization and magnetic anisotropy diverge at the proton fluence of 5 x 1016 H+/cm2, which is prominent in the ferromagnetic phase, in particular. This work demonstrates that proton irradiation is a feasible method for modifying the magnetic properties and local magnetic interactions of vdWs crystals, which represents a significant step forward in the design of future spintronic and magneto-electronic applications.

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Section: Resultsmentioning

confidence: 99%

Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr₂Si₂Te₆ magnet

Iturriaga,

Chen,

Yang

et al. 2024

J. Phys.: Condens. Matter

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“…Appropriate ferromagnetic and insulating material choices enhance the TMR ratio in MTJ structures [39]. Moreover, it is observed that the formation of dead layers at the level of the insulating layer in MTJ reduces the TMR percentage and spin polarization [40].…”

Section: System Model and Problem Statementmentioning

confidence: 99%

Design of behavior prediction model of molybdenum disulfide magnetic tunnel junctions using deep networks

Makdey¹,

Patrikar

2023

Semicond. Sci. Technol.

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Magnetic tunnel junctions (MTJs) are widely used in spintronics development owing to their high scalability and minimal power consumption. However, analyzing the electrical and magnetic behaviors of MTJs in real-time applications is challenging. In this study, an MTJ based on molybdenum disulfide (MoS2) wasdesigned, and a novel deep Elman neural behavior prediction model wasdeveloped to analyze its behavior. In the proposed model, MoS2 acts as a tunnel barrier, and iron oxide (Fe3O4) acts as a ferromagnetic electrode. The interface between Fe3O4 and MoS2 in the MTJ improves the spin polarization and tunnel magnetoresistance ratio. Herein, the performance parameters of the MTJ wereused as inputs for the developed prediction model, which analyzes the magnetic and electrical properties of the MTJ using prediction parameters. The spin currents in the parallel and anti-parallel configurations werealso determined. The designed model wasimplemented using MATLAB and validated through comparison of simulation and experimental results.

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“…These sensors are based on various principles, such as search coil, anisotropic magnetoresistance, giant magnetoresistance, magnetic tunnel junctions, fluxgate, Hall effect and superconducting quantum interference device systems [3]. Among these, magnetic tunnel junction (MTJ)-based magnetic sensors exploit tunnelling magnetoresistance (TMR), which has revolutionized various fields, from data storage in computer hard disks to medical applications such as biosensors [4][5][6][7][8]. TMR relies on the magnetic properties of the material, such as coercivity and magnetic anisotropy, to detect and measure magnetic fields.…”

Section: Introductionmentioning

confidence: 99%

“…Various strategies have been explored to tailor the anisotropy of Heusler alloys, such as strain-induced anisotropy change [60], buffer layer effects [61,62], doping-induced disorder effects [63] and irradiation [8,[64][65][66]. Modification of the magnetic properties of various materials via irradiation has been reported for several types of irradiations, such as plasma of various gasses [67,68], ionizing radiation [69,70], high-energy protons and cosmic rays, X-rays [71], neutrons [72] and even several low and swift heavy ion irradiations [73,74].…”

Section: Introductionmentioning

confidence: 99%

“…Modification of the magnetic properties of various materials via irradiation has been reported for several types of irradiations, such as plasma of various gasses [67,68], ionizing radiation [69,70], high-energy protons and cosmic rays, X-rays [71], neutrons [72] and even several low and swift heavy ion irradiations [73,74]. Among these techniques, ion irradiation is a well-established technique for shaping the magnetic properties of materials due to its high precision and control over the irradiation parameters, such as the ion species, ion energy and ion beam current density [8,[64][65][66]75,76]. Ion beam modification is a powerful technique that can modify the magnetic properties of materials and induce a variety of precise structural changes.…”

Section: Introductionmentioning

confidence: 99%

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Shaping Perpendicular Magnetic Anisotropy of Co2MnGa Heusler Alloy Using Ion Irradiation for Magnetic Sensor Applications

Mahendra

Murmu

Acharya

et al. 2023

Sensors

Self Cite

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Magnetic sensors are key elements in many industrial, security, military, and biomedical applications. Heusler alloys are promising materials for magnetic sensor applications due to their high spin polarization and tunable magnetic properties. The dynamic field range of magnetic sensors is strongly related to the perpendicular magnetic anisotropy (PMA). By tuning the PMA, it is possible to modify the sensing direction, sensitivity and even the accuracy of the magnetic sensors. Here, we report the tuning of PMA in a Co2MnGa Heusler alloy film via argon (Ar) ion irradiation. MgO/Co2MnGa/Pd films with an initial PMA were irradiated with 30 keV 40Ar+ ions with fluences (ions·cm−2) between 1 × 1013 and 1 × 1015 Ar·cm−2, which corresponds to displacement per atom values between 0.17 and 17, estimated from Monte-Carlo-based simulations. The magneto optical and magnetization results showed that the effective anisotropy energy (Keff) decreased from ~153 kJ·m−3 for the un-irradiated film to ~14 kJ·m−3 for the 1 × 1014 Ar·cm−2 irradiated film. The reduced Keff and PMA are attributed to ion-irradiation-induced interface intermixing that decreased the interfacial anisotropy. These results demonstrate that ion irradiation is a promising technique for shaping the PMA of Co2MnGa Heusler alloy for magnetic sensor applications.

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Tailoring of magnetic anisotropy by ion irradiation for magnetic tunnel junction sensors

Cited by 14 publications

References 185 publications

Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr₂Si₂Te₆ magnet

Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr₂Si₂Te₆ magnet

Design of behavior prediction model of molybdenum disulfide magnetic tunnel junctions using deep networks

Shaping Perpendicular Magnetic Anisotropy of Co2MnGa Heusler Alloy Using Ion Irradiation for Magnetic Sensor Applications

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Tailoring of magnetic anisotropy by ion irradiation for magnetic tunnel junction sensors

Cited by 14 publications

References 185 publications

Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr2Si2Te6 magnet

Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr2Si2Te6 magnet

Design of behavior prediction model of molybdenum disulfide magnetic tunnel junctions using deep networks

Shaping Perpendicular Magnetic Anisotropy of Co2MnGa Heusler Alloy Using Ion Irradiation for Magnetic Sensor Applications

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Product

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Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr₂Si₂Te₆ magnet

Proton-fluence dependent magnetic properties of exfoliable quasi-2D van der Waals Cr₂Si₂Te₆ magnet