Tailoring interlayer exchange coupling of ferromagnetic films across MgO with Fe nanoclusters

Wong, Judith Ju‐Ming; Ramirez, Luciana; Swartz, Adrian; Hoff, Andrew; Han, Wei; Li, Yan; Kawakami, Roland

doi:10.1103/physrevb.81.094406

Cited by 18 publications

(29 citation statements)

References 32 publications

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“…This study 97 complements our observation of the strongest OMC e®ect when TJMD employed the MTJs with hard and soft FM electrodes only. The observation of change in magnetic properties discussed here required Co/NiFe/AlO x /NiFe MTJ.…”

Section: Tjmd-based Molecular Spintronicssupporting

confidence: 69%

“…32 Depending on the Fe nanoclusters position in the MgO tunnel barrier, the inter-electrode exchange coupling not only exhibited signi¯cant variations in magnitude but also switched nature of coupling between anti-ferromagnetic and FM types. 97 Nanoclusters, however, only increased the inter-electrode coupling by a factor of < 2. One of the most important¯nding of this study is the unambiguous demonstration of the e®ect of using hard and soft FM electrodes for observing the strongest e®ect from nanoclusters.…”

Section: Tjmd-based Molecular Spintronicsmentioning

confidence: 99%

“…We considered OMCs to be analogous to magnetic nanoclusters. Wong et al 97 investigated the e®ect of iron (Fe) nanoclusters on the interelectrodes exchange coupling of a MTJ. In this study, Fe nanoclusters were inserted within the magnesium oxide (MgO) tunnel barrier, throughout the planar area of a MTJ.…”

Section: Tjmd-based Molecular Spintronicsmentioning

confidence: 99%

“…Wong et al 97 modeled the e®ect of nanoclusters by focusing on its interaction with the individual FM electrodes. We adopted the Wong et al 97 model to represent the OMC induced cumulative J in a TJMD [Eq. (1)]:…”

Section: Tjmd-based Molecular Spintronicsmentioning

confidence: 99%

See 3 more Smart Citations

Advantages of Prefabricated Tunnel Junction-Based Molecular Spintronics Devices

Tyagi

Friebe

Baker

2015

NANO

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Molecule-based devices may govern the advancement of the next generation's logic and memory devices. Molecules have the potential to be unmatched device elements as chemists can mass produce an endless variety of molecules with novel optical, magnetic and charge transport characteristics. However, the biggest challenge is to connect two metal leads to a target molecule (s) and develop a robust and versatile device fabrication technology that can be adopted for commercial scale mass production. This paper discusses distinct advantages of utilizing commercially successful tunnel junctions as a vehicle for developing molecular spintronics devices. We describe the use of a prefabricated tunnel junction with the exposed sides as a testbed for molecular device fabrication. On the exposed sides of a tunnel junction molecules are bridged across an insulator by chemically bonding with the two metal electrodes; sequential growth of metal-insulator-metal layers ensures that separation between two metal electrodes is controlled by the insulator thickness to the molecular device length scale. This paper highlights various attributes of tunnel junction-based molecular devices with ferromagnetic electrodes for making molecular spintronics devices. We strongly emphasize a need for close collaboration between chemists and magnetic tunnel junction (MTJ) researchers. Such partnerships will have a strong potential to develop tunnel junction-based molecular devices for futuristic areas such as memory devices, magnetic metamaterials, high sensitivity multi-chemical biosensors, etc.

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Section: Tjmd-based Molecular Spintronicssupporting

confidence: 69%

Section: Tjmd-based Molecular Spintronicsmentioning

confidence: 99%

Section: Tjmd-based Molecular Spintronicsmentioning

confidence: 99%

Section: Tjmd-based Molecular Spintronicsmentioning

confidence: 99%

See 2 more Smart Citations

Advantages of Prefabricated Tunnel Junction-Based Molecular Spintronics Devices

Tyagi

Friebe

Baker

2015

NANO

View full text Add to dashboard Cite

show abstract

“…On the contrary, for a semiconducting or insulating spacer [3][4][5][6][7][8], magnetic properties seem to depend deeply on growth conditions and then on structural specifications. Among them, the MgO spacer [9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24] appears unique in presenting a large variety of experimental results. They concern either the MgO thickness range and the coupling sign and strength, or the junction magnetic geometry (planar or perpendicular magnetization).…”

Section: Introductionmentioning

confidence: 99%

Metalliclike behavior of the exchange coupling in (001) Fe/MgO/Fe junctions

et al. 2017

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Exchange magnetic coupling between Fe electrodes through a thin MgO interlayer in epitaxial junctions has been investigated as a function of temperature, MgO thickness, and interface quality. Depending on the MgO thickness, which has been varied from 1.5 to 4 monolayers, two opposite temperature dependences are clearly disentangled. For a thin MgO spacer, the main component decreases with temperature following a metalliclike behavior. On the contrary, for the thickest MgO layers, the main component increases with temperature, following an Arrhenius law. Moreover, the insertion of a monoatomic roughness at the bottom MgO interface, induced by the addition of a fraction of a Fe monolayer, exacerbates the metallic features as an oscillatory behavior from antiferromagnetic to ferromagnetic is observed. These results allow questioning the simple tunneling mechanism usually invoked for MgO coupling, and suggest a crossover behavior of the thin MgO spacer from metallic to insulating with a progressive opening of the gap.

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Magnetic Exchange Phenomena Probed by Neutron Scattering

Saerbeck

2014

Solid State Physics

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Tailoring interlayer exchange coupling of ferromagnetic films across MgO with Fe nanoclusters

Cited by 18 publications

References 32 publications

Advantages of Prefabricated Tunnel Junction-Based Molecular Spintronics Devices

Advantages of Prefabricated Tunnel Junction-Based Molecular Spintronics Devices

Metalliclike behavior of the exchange coupling in (001) Fe/MgO/Fe junctions

Magnetic Exchange Phenomena Probed by Neutron Scattering

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