Tailoring dielectric permittivity of epitaxial Gd-doped CeO2−x
films by ionic defects
A Palliotto,
Y Wu,
A D Rata
et al.
Abstract:Engineering materials with highly tunable physical properties in response to external stimuli is a cornerstone strategy for advancing energy technology. Among various approaches, engineering ionic defects and understanding their roles are essential in tailoring emergent material properties and functionalities. Here, we demonstrate an effective approach for creating and controlling ionic defects (oxygen vacancies) in epitaxial Gd-doped CeO2-x (CGO) (001) films grown on Nb: SrTiO3(001) single crystal. Our result… Show more
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