Tailoring detection wavelength of InGaAs quantum wire infrared photodetector

Abstract

The authors report on tailoring detection wavelengths of InGaAs quantum wire infrared photodetectors, using different numbers of short-period superlattice ͑SPS͒ pairs to vary the thickness of quantum wires ͑QWRs͒ along the growth direction, prepared by the strain-induced lateral-layer ordering process. The QWR characteristics are maintained for QWRs using either In 0.52 Al 0.24 Ga 0.24 As or In 0.52 Al 0.48 As barriers and for thin QWR layers made of six SPS pairs. Sharp photoresponses at 6.3 and 8.4 m are observed for quantum wire infrared photodetectors with ten and six SPS pairs, respectively.