2013
DOI: 10.1002/pssc.201200522
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Tailoring broadband gain incorporating quantum dot fluctuations for a GaInNAs semiconductor optical amplifier

Abstract: It has been observed experimentally that the band edge photoluminescence (PL) of GaxIn1‐xNyAs1‐yquantum well (QW) materials is broadened due to compositional fluctuations with N distribution. These fluctuations can be modelled as quantum dot‐like region at the conduction band minimum in as‐grown GaInNAs/GaAs QWs. We have developed a rate‐equation approach to describe the distribution of electrons in the QW and QD‐like fluctuations which include the carrier recombination from both the conventional 2D QW layer a… Show more

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