Tailored wafer holder for a reliable deposition of sputtered aluminium nitride thin films at low temperatures

Fischeneder, M.; Wistrela, E.; Bittner, A.; Schneider, Michael; Schmid, U.

doi:10.1016/j.mssp.2017.08.010

Cited by 5 publications

(1 citation statement)

References 37 publications

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“…During AlN synthetization the wafer is continuously self-heated by the particle bombardment. In order to ensure a low sample temperature (T < 140 °C), thus avoiding the degeneration of the photo-resist and enabling a lift-off process for AlN patterning ( Figure 1 , step 5), a tailored clamping fixture for the 4” wafers was used [ 25 ]. After deposition and patterning of the gold (Au) top electrode (top electrode thickness T TE = 200 nm) the piezoelectric thin film actuator stack is completed, as shown at Figure 1 , steps 6–9.…”

Section: Methodsmentioning

confidence: 99%

Tuneable Q-Factor of MEMS Cantilevers with Integrated Piezoelectric Thin Films

Fischeneder

Oposich

Schneider

et al. 2018

Sensors

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In atomic force microscopes (AFM) a resonantly excited, micro-machined cantilever with a tip is used for sensing surface-related properties. When targeting the integration of AFMs into vacuum environments (e.g., for enhancing the performance of scanning electron microscopes), a tuneable Q-factor of the resonating AFM cantilever is a key feature to enable high speed measurements with high local resolution. To achieve this goal, in this study an additional mechanical stimulus is applied to the cantilever with respect to the stimulus provided by the macroscopic piezoelectric actuator. This additional stimulus is generated by an aluminum nitride piezoelectric thin film actuator integrated on the cantilever, which is driven by a phase shifted excitation. The Q-factor is determined electrically by the piezoelectric layer in a Wheatstone bridge configuration and optically verified in parallel with a laser Doppler vibrometer. Depending on the measurement technique, the Q-factor is reduced by a factor of about 1.9 (electrically) and 1.6 (optically), thus enabling the damping of MEMS structures with a straight-forward and cheap electronic approach.

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Section: Methodsmentioning

confidence: 99%