Tailored Synthesis of Ga2O3 Nanofibers Towards Enhanced Photocatalytic Hydrogen Evolution

Hou, Huilin; Yang, Wenjiang; Sun, Han‐Dong; Zhang, Huaqin; Feng, Xinbin; Kuang, Yongbo

doi:10.1007/s10562-022-04217-7

Cited by 1 publication

(1 citation statement)

References 49 publications

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“…The peaks agree with the JCPDS card no. 41-1103 for a monoclinic lattice [20]. Bragg's law for diffraction is expressed in Equation (2),…”

Section: Xrd Of Ga-1mentioning

confidence: 99%

Advanced Fabrication of 3D Micro/Nanostructures of Gallium Oxide with a Tuned Band Gap and Optical Properties

Jamwal,

Kiani

2024

Micromachines

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Gallium oxide (Ga2O3) is a promising material for high-power semiconductor applications due to its wide band gap and high breakdown voltage. However, the current methods for fabricating Ga2O3 nanostructures have several disadvantages, including their complex manufacturing processes and high costs. In this study, we report a novel approach for synthesizing β-Ga2O3 nanostructures on gallium phosphide (GaP) using ultra-short laser pulses for in situ nanostructure generation (ULPING). We varied the process parameters to optimize the nanostructure formation, finding that the ULPING method produces high-quality β-Ga2O3 nanostructures with a simpler and more cost-effective process when compared with existing methods. Scanning electron microscopy (SEM) and energy-dispersive X-ray spectroscopy (EDX) were used to characterize the samples, which indicated the presence of phosphorous. X-ray photoelectron spectroscopy (XPS) confirmed the formation of gallium oxide, along with a minor amount of phosphorus-containing compounds. Structural analysis using X-ray diffraction (XRD) revealed the formation of a monoclinic β-polymorph of Ga2O3. We also measured the band gap of the materials using reflection electron energy loss spectroscopy (REELS), and found that the band gap increased with higher nanostructure formation, reaching 6.2 eV for the optimized sample. Furthermore, we observed a change in the heterojunction alignment, which we attribute to the change in the oxidation of the samples. Our results demonstrate the potential of ULPING as a novel, simple, and cost-effective method for fabricating Ga2O3 nanostructures with tunable optical properties. The ULPING method offers a green alternative to existing fabrication methods, making it a promising technology for future research in the field of Ga2O3 nanostructure fabrication.

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“…The peaks agree with the JCPDS card no. 41-1103 for a monoclinic lattice [20]. Bragg's law for diffraction is expressed in Equation (2),…”

Section: Xrd Of Ga-1mentioning

confidence: 99%

Advanced Fabrication of 3D Micro/Nanostructures of Gallium Oxide with a Tuned Band Gap and Optical Properties

Jamwal,

Kiani

2024

Micromachines

View full text Add to dashboard Cite

show abstract

Tailored Synthesis of Ga2O3 Nanofibers Towards Enhanced Photocatalytic Hydrogen Evolution

Cited by 1 publication

References 49 publications

Advanced Fabrication of 3D Micro/Nanostructures of Gallium Oxide with a Tuned Band Gap and Optical Properties

Advanced Fabrication of 3D Micro/Nanostructures of Gallium Oxide with a Tuned Band Gap and Optical Properties

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