Ta 2 O 5 thin films with exceptionally high dielectric constant

Abstract

Simulation and dielectric characterization of reactive dc magnetron cosputtered ( Ta 2 O 5 ) 1−x ( TiO 2 ) x thin films J.

Crystallization improvement of Ta2O5 thin films by the addition of water vapor

“…Recently, promising applications of Ta promoted even greater interests [4]. Although much research effort has been devoted to the structural and electrical properties of the materials, as-deposited Ta 2 O 5 thin films still suffer from the crystallization difficulty and poor electrical properties [5][6][7][8]. Generally, it is necessary to deposit or anneal at high temperature in order to improve the structure and properties of Ta 2 O 5 thin films on Si substrates.…”

Effects of an Added Iodine Source (C2H5I) on Ru Metal–Organic Chemical Vapor Deposition

“…Ru is used as an electrode for these dielectric materials due to its dry etchability and high conductivity under oxidizing conditions. [5,6] Recently, a Ta 2 O 5 film grown on a Ru(002) film and annealed at 800 C [7] was found to have a dielectric constant at its highest level of 110, due to the delocalized electrons in the hexagonal crystal structure. [8] Considering process maturity, feasibility, and reliability, [9] Ru±Ta 2 O 5 ±Ru is regarded as an attractive structure for a metal±insulator±metal (MIM) capacitor.…”

“…[8] Considering process maturity, feasibility, and reliability, [9] Ru±Ta 2 O 5 ±Ru is regarded as an attractive structure for a metal±insulator±metal (MIM) capacitor. Although a Ru thin film grown by physical vapor deposition (PVD) has good material characteristics, [7] it has to be grown by CVD to meet the step coverage required for the bottom electrode of a DRAM capacitor. [6] Studies of Ru MOCVD began only in the last few years, and its deposition mechanism has not yet been clearly established.…”

Structural and electrical characteristics of highly textured oxidation-free Ru thin films by DC magnetron sputtering

“…Ruthenium is one of the most promising candidate electrode materials for some capacitors dielectrics [4][5][6]. Ru and RuO 2 thin films have been receiving much attention because of their good conductivity, low temperature coefficient of resistance (TCR), and high thermal stability [7].…”