T-x phase diagram of the TlGaS2-TlFeS2 system and band gap of TlGa1 − x Fe x S2 (0 ≤ x ≤ 0.01) single crystals

Mustafaeva, S. N.; Asadov, M. M.; Kyazimov, S. B.; Gasanov, N. Z.

doi:10.1134/s0020168512090117

Cited by 14 publications

(13 citation statements)

References 2 publications

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“…Electrical and thermoelectric properties of TlFe 1−x Ga x S 2 were measured in the temperature range 80-355 K. e amplitude of the external DC electric field applied to the samples was from the Ohmic region of their current-voltage characteristics. hich agrees well with data [1][2][3][4]. e results of the investigations into the electrical and thermoelectric properties of TlFe 1−x Ga x S 2 samples are presented below.…”

Section: Methodssupporting

confidence: 86%

“…To examine the effect of the partial Ga 3+ ⟶ Fe 3+ cation substitution on the properties of the solid solutions of TlGaS 2 -TlFeS 2 system, TlFe 1−x Ga x S 2 (x � 0.025 and 0.1) was synthesized [4,5]. For the experiments, we used freshly grown samples on the basis of TlFeS 2 which practically do not deteriorate in the open air for a long time.…”

Section: Methodsmentioning

confidence: 99%

“…In [4], the T − x phase diagram of the TlFeS 2 −TlGaS 2 system has been constructed (simple eutectic system, eutectic at 80 mol.% TlGaS 2 with a melting point of 953 K). It was established that this system contains limited series of monoclinic solid solutions based on the ternary endmembers.…”

Section: Introductionmentioning

confidence: 99%

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Charge Transport and Thermo-emf in TlFe_1−xGa_xS₂ Solid Solutions

Mustafaeva

Асадов

2019

Advances in Materials Science and Engineering

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TlFe1−xGaxS2 solid solutions have been prepared by direct elemental synthesis. The dependences of the thermoelectric properties and DC conductivity on temperature have been studied in TlFe1−xGaxS2 solid solutions. In terms of hopping mechanism of charge transfer, the parameters of localized states in the forbidden gap of TlFe1−xGaxS2 have been evaluated. The type of conductivity has been determined from the temperature dependences of thermoelectric power of TlFe1−xGaxS2 solid solutions.

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Section: Methodssupporting

confidence: 86%

Section: Methodsmentioning

confidence: 99%

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Charge Transport and Thermo-emf in TlFe_1−xGa_xS₂ Solid Solutions

Mustafaeva

Асадов

2019

Advances in Materials Science and Engineering

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“…Semiconductors rarely have a positive temperature coefficient of their band gap. In particular, such an experimental fact in TlGaS 2 and TlGaS 2 -based single crystals [10,11] is thought to be caused by significant contribution of thermal expansion of their lattice to the temperature variation of E g . Thus, the TlGaS 2 and (TlGaS 2 ) 1-х (TlInSe 2 ) х crystals are found to be similar in the structure of their absorption edge formed by direct interband transitions.…”

Section: Resultsmentioning

confidence: 99%

Influence of the composition of (TlGaS2)1–х(TlInSe2)x solid solutions on their physical properties

Mustafaeva¹

2017

Semicond. Phys. Quantum Electron. Optoelectron.

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Abstract. The single crystals of (TlGaS 2 ) 1-х (TlInSe 2 ) х (х = 0…0.5) solid solutions have been grown up. The photoelectric, X-ray dosimetric, dielectric and optical characteristics of the (TlGaS 2 ) 1-х (TlInSe 2 ) х solid solutions with various compositions have been determined. The maximum and spectral range of photosensitivity were found to redshift as x increases from 0 to 0.5. Both the photo-and X-ray sensitivity of these solid solutions are higher than those of pure TlGaS 2 . The nature of dielectric losses and the hopping mechanism of charge transport in the (TlGaS 2 ) 1-х (TlInSe 2 ) х solid solutions have been established from the experimental results on high-frequency dielectric measurements. The temperature dependences of exciton peak position for various compositions (x = 0…0.3) have been investigated within 77…180 K temperature interval. It has been ascertained that, with increasing x in (TlGaS 2 ) 1-х (TlInSe 2 ) х solid solutions, the width of their forbidden gap decreases.

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“…Control of the physical parameters of the ternary compounds may be achieved by partial replacement of the Group III-a ions by ions of other metals. It is known that doping of TlGaS 2 leads to certain changes in the physical properties [10][11][12][13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

Phase diagram of the TlGaS2–CdS system and optical properties of a TlGaS2:Cd2+ crystal

Піскач¹,

Myronchuk²,

Makhnovets³

2017

Chem. Met. Alloys

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The phase diagram of the TlGaS 2-CdS system is of the eutectic type, with the coordinates 1021 K, ∼ ∼ ∼ ∼80 mol.% TlGaS 2 / ∼ ∼ ∼ ∼20 mol.% CdS. The solid solubility of the components is less than 5 mol.% at 670 K. The optical properties of a single crystal of composition 98 mol.% TlGaS 2 / 2 mol.% CdS, grown by the Bridgman method, were investigated. Absorption measurements were performed in the 100-300 K range with 50 K increments. The bandgap energies for direct (E gd) and indirect (E gi) transitions in TlGaS 2 :Cd 2+ were calculated as a function of temperature. They were found to be 2.38 and 2.32 eV at 100 K, and 2.27 and 2.2 eV at 300 K, i.e. the bandgap for indirect optical transitions is smaller than the bandgap for direct transitions. The values of the direct and indirect bandgap energies decrease with increasing temperature, whereas the steepness parameter and Urbach energy increase with increasing temperature in the range 100-300 K. The Urbach energy was calculated as 163 meV at 100 K and 239 meV at 300 K.

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T-x phase diagram of the TlGaS2-TlFeS2 system and band gap of TlGa1 − x Fe x S2 (0 ≤ x ≤ 0.01) single crystals

Cited by 14 publications

References 2 publications

Charge Transport and Thermo-emf in TlFe_1−xGa_xS₂ Solid Solutions

Charge Transport and Thermo-emf in TlFe_1−xGa_xS₂ Solid Solutions

Influence of the composition of (TlGaS2)1–х(TlInSe2)x solid solutions on their physical properties

Phase diagram of the TlGaS2–CdS system and optical properties of a TlGaS2:Cd2+ crystal

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T-x phase diagram of the TlGaS2-TlFeS2 system and band gap of TlGa1 − x Fe x S2 (0 ≤ x ≤ 0.01) single crystals

Cited by 14 publications

References 2 publications

Charge Transport and Thermo-emf in TlFe1−xGaxS2 Solid Solutions

Charge Transport and Thermo-emf in TlFe1−xGaxS2 Solid Solutions

Influence of the composition of (TlGaS2)1–х(TlInSe2)x solid solutions on their physical properties

Phase diagram of the TlGaS2–CdS system and optical properties of a TlGaS2:Cd2+ crystal

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Charge Transport and Thermo-emf in TlFe_1−xGa_xS₂ Solid Solutions

Charge Transport and Thermo-emf in TlFe_1−xGa_xS₂ Solid Solutions