T/R Switch Composed of Three HV-MOSFETs With 12.1-μW Consumption That Enables Per-Channel Self-Loopback AC Tests and −18.1-dB Switching Noise Suppression for 3-D Ultrasound Imaging With 3072-Ch Transceiver

Kajiyama, Shinya; Igarashi, Yutaka; Yazaki, Toru; Katsube, Yusaku; Nishimoto, Tetsuya; Nakagawa, Tatsuo; Nakamura, Yūichi; Hayashi, Yoshihiro; Kaneko, Tetsuya; Ishikuro, Hiroki; Yamawaki, Taizo

doi:10.1109/tvlsi.2021.3129313

Cited by 2 publications

(2 citation statements)

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“…5,14 In bipolar HV pulsers, however, a T/R switch typically requires several HV devices so as to provide bidirectional isolation between the output and ground. [15][16][17] To address this issue, the T/R switch can be embedded inside the RTZ stage of the pulser using a lowvoltage (LV) MOS transistor. By doing so, a separate T/R switch is no longer required, and since HV MOS transistors typically occupy a very larger area than LV MOS transistors, removing several HV MOS transistors can result in a significant reduction in the total die area.…”

Section: Introductionmentioning

confidence: 99%

“…In unipolar HV pulsers, the T/R switch may be implemented using a single HV MOS transistor 5,14 . In bipolar HV pulsers, however, a T/R switch typically requires several HV devices so as to provide bidirectional isolation between the output and ground 15–17 . To address this issue, the T/R switch can be embedded inside the RTZ stage of the pulser using a low‐voltage (LV) MOS transistor.…”

Section: Introductionmentioning

confidence: 99%

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A compact bipolar high‐voltage pulser with a novel transistor gate–source protection scheme for ultrasound imaging applications

Ehsanipour,

Shoaei

2023

Circuit Theory & Apps

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SummaryIn this article, a compact integrated high‐voltage (HV) pulser is presented, which can serve as an actuator in area‐limited medical ultrasound imaging applications. The proposed HV pulser is capable of producing bipolar return‐to‐zero (RTZ) HV pulses with a maximum peak‐to‐peak amplitude of 60 V. A novel RTZ stage including a new transistor gate–source protection scheme is used in this work, resulting in a reduced die area by enabling the use of an embedded transmit/receive (T/R) switch and obviating the need for a separate T/R switch. The proposed HV pulser also incorporates programmable delay elements by which the RTZ time can be controlled. By selecting the minimum allowed value of delay, the pulser is able to generate square‐wave HV pulses as well. Designed and implemented in a 0.18‐μm HV Bipolar‐CMOS‐DMOS (BCD) technology, the pulser occupies a layout area of 0.455 mm2. The function of the proposed design has been verified using post‐layout simulations when driving a 220‐pF capacitor in parallel with a 1‐kΩ resistor load. The simulation results indicate that the pulser consumes an average power of 14.85 mW when producing 2‐MHz, three‐cycle HV pulses with a pulse repetition frequency (PRF) of 5 kHz.

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