1993
DOI: 10.1016/0168-583x(93)95988-h
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Systematics of scaling of heavy ion blocking in thin silicon crystals

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Cited by 6 publications
(6 citation statements)
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“…In Ref. [3] we have shown that scaling is valid over a wide range of E/Z for a variety of projec-~Ĩ tiles. %'e have also seen that the blocking pattern for the evaporation residues (E 1 MeV/Z) does not show any difFerence with target crystal thickness ranging &om 0.7 to 1.5 pm, which indeed shows that multiple scattering efFects do not pose a serious problem in the present measurements.…”
Section: Methodsmentioning
confidence: 96%
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“…In Ref. [3] we have shown that scaling is valid over a wide range of E/Z for a variety of projec-~Ĩ tiles. %'e have also seen that the blocking pattern for the evaporation residues (E 1 MeV/Z) does not show any difFerence with target crystal thickness ranging &om 0.7 to 1.5 pm, which indeed shows that multiple scattering efFects do not pose a serious problem in the present measurements.…”
Section: Methodsmentioning
confidence: 96%
“…The detector gives both X and Y position information along with the total energy (E) of these particles. Even though the peripheral region of the detector shows pin-cushion distortion, the central 10 x 10 mm portion of the detector shows good linearity and gives position resolution better than 1 mm [3]. This central region of the detector has been used for the present studies.…”
Section: Methodsmentioning
confidence: 99%
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“…The initial measurements were carried out with a 0.17 µm thick Si single crystal which we also used in earlier measurements [4,5]. However, this crystal had to be abandoned because it broke during measurement and another crystal of thickness 0.75 µm which was also produced by chemical etching [22] of a 300 µm thick Si single crystal ( 100 , n-type, device grade), was used. Its performance for channelling purposes was found to be inferior to the crystal used earlier.…”
Section: Methodsmentioning
confidence: 99%