2011
DOI: 10.1088/0022-3727/44/47/475302
|View full text |Cite
|
Sign up to set email alerts
|

Systematical, experimental investigations on LiMgZ (Z = P, As, Sb) wide band gap semiconductors

Abstract: This work reports on the experimental investigation of wide band gap compounds LiMgZ (Z = P, As, Sb), which are promising candidates for opto-electronics and anode materials for lithium batteries. The compounds crystallize in the cubic (C1 b ) MgAgAs structure (space group ). The polycrystalline samples are synthesized by solid-state reaction methods. X-ray and neutron diffraction measurements show homogeneous, single-phased samples. The electronic properties are studied… Show more

Help me understand this report
View preprint versions

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1
1
1

Citation Types

0
15
0

Year Published

2014
2014
2022
2022

Publication Types

Select...
6
1

Relationship

1
6

Authors

Journals

citations
Cited by 39 publications
(15 citation statements)
references
References 19 publications
0
15
0
Order By: Relevance
“…The QSH state was subsequently realized in a HgTe/CdTe quantum well structure (78): materials that crystallize in the same space group (F 43m) as the XZ binary semiconductors (HgTe, CdTe, ZnS) include diamond and the Half-Heusler compounds. Half-Heusler semiconductors with 8 or 18 VEs exist with a wide range of band-gaps (79,80), and the possibility to find half -Heuslers with a topologically non-trivial state was quickly realized (81,82). A set of half -Heuslers that could be classified into topologically trivial and potentially non-trivial materials was proposed.…”
Section: Non-collinear Magnetic Structurementioning
confidence: 99%
“…The QSH state was subsequently realized in a HgTe/CdTe quantum well structure (78): materials that crystallize in the same space group (F 43m) as the XZ binary semiconductors (HgTe, CdTe, ZnS) include diamond and the Half-Heusler compounds. Half-Heusler semiconductors with 8 or 18 VEs exist with a wide range of band-gaps (79,80), and the possibility to find half -Heuslers with a topologically non-trivial state was quickly realized (81,82). A set of half -Heuslers that could be classified into topologically trivial and potentially non-trivial materials was proposed.…”
Section: Non-collinear Magnetic Structurementioning
confidence: 99%
“…In this paper, we follow a similar approach to investigate the thermoelectric properties of Li-based Nowotny-Juza phase (X I Y II Z V ) [13] HHs having VEC = 8 in their primitive cell. There exists reports for the synthesis of some of Li-based X I Y II Z V HHs [14][15][16].…”
Section: Introductionmentioning
confidence: 99%
“…The LiZnP prepared in this manner exhibits nanoscale particle sizes and colloidal stability. LiZnP is a particular interesting compound due to its suggested application in thermoelectrics, photovoltaics, Li‐ion batteries, and as a neutron detector . The bandgap and lattice constant of LiZnP are in good agreement with CdS, making the former an ideal low toxicity substitute for the latter …”
Section: Lithium‐based Nowotny–juza Phasesmentioning
confidence: 99%
“…Li-based Nowotny-Juza phases typically adopt either the cubic MgAgAs-type or hexagonal LiGaGe-typec rystal structures ( Figure 1), which are most closely relatedt ot he zinc-blende and wurtzite frameworks, respectively.R ecently,L iZnP became the first filled tetrahedral semiconductor to be prepared by a low temperature, solution-phase method. [19] The LiZnP prepared in this manner exhibitsn anoscale particle sizes and colloidal stability.L iZnP is ap articular interesting compound due to itss uggested application in thermoelectrics, [20] photovoltaics, [21,22] Li-ion batteries, [23] and as an eutron detector. [24] The bandgapa nd lattice constant of LiZnP are in good agreement with CdS, making the former an ideal lowt oxicity substitute for the latter.…”
Section: Liznpmentioning
confidence: 99%