Abstract:The atomic arrangements of zinc blende structured GaNxAs1−x−yBiy thin films coherently grown on GaAs(001) substrates are theoretically investigated using empirical interatomic potentials and Monte Carlo simulations. The resultant atomic arrangements of GaNxAs1−x−yBiy strongly depend on N composition x and substrate lattice parameter a sub. It is found that the incorporation of N atoms in GaAsBi results in the formation of layered structures consisting of GaN, GaAs, and GaBi regions. This is because Ga-N intera… Show more
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