Systematic stacking of PbS/CdS/CdSe multi-layered quantum dots for the enhancement of solar cell efficiency by harvesting wide solar spectrum

Manjceevan, Arumukham; Bandara, Jayasundera

doi:10.1016/j.electacta.2018.03.193

Cited by 37 publications

(10 citation statements)

References 34 publications

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“…The peak at 1.02 eV is attributed to the oxidation process of PbS. The energy levels of E CB and E VB were calculated using the equations below:

E_{CB} = - E_{a} = - e ((), E_{onset}^{red} + 4.71) eV,

E_{VB} = - E_{c} = - e ((), E_{onset}^{ox} + 4.71) eV,

where

E_{onset}^{red}

and

E_{onset}^{ox}

is the energy of reduction reaction and oxidation reaction with step onset, respectively. The calculated values of E g , E CB , and E VB of the five samples are listed in Table .…”

Section: Resultssupporting

confidence: 75%

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Band gap engineered ternary semiconductor Pb_xCd_1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study

Boon-on

Lien

Chang

et al. 2020

Progress in Photovoltaics

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We report the synthesis and photovoltaic properties of a ternary metal sulfide alloyed semiconductor PbxCd1−xS prepared by the two‐stage sequential ionic layer adsorption reaction. The synthesized PbxCd1−xS nanoparticles (NPs) retain the hexagonal structure of the CdS host with Pb substituting a fraction of the Cd atom (x = 0‐0.17). Band structures of PbxCd1−xS with various Pb contents x were calculated using the complementary density functional theory (DFT) method. Optical, quantum efficiency, cyclic voltammetry measurements, and band structure calculation revealed that the band gap of PbxCd1−xS decreased with increasing x, resulting in an increased optical absorption band from 500 to 720 nm (1.73‐2.44 eV) for x = 0 to 0.17. Solid‐state PbxCd1−xS semiconductor nanoparticle‐sensitized solar cells (NSSCs) were fabricated from the synthesized NPs using spiro‐OMeTAD as the hole‐transporting material. The best Pb0.05Cd0.95S cell yielded a power conversion efficiency (PCE) of 3.67%, a Voc of 0.70 V, and a fill factor (FF) of 62.8% under 1 sun. The PCE increased to 5.93% under a reduced light intensity of 0.1 sun and further increased to 8.48% under 0.01 sun. The external quantum efficiency (EQE) spectrum covers the spectral range of 300 to 730 nm with a maximal EQE of 82% at λ = 580 nm. The PCE over 8% can be categorized into a high‐efficiency NSSCs. In addition, the Voc of 0.70 V is a relatively high Voc among all NSSCs. The high PCE and Voc suggest that PbxCd1−xS has potential to be an efficient solar absorber.

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“…The peak at 1.02 eV is attributed to the oxidation process of PbS. The energy levels of E CB and E VB were calculated using the equations below:

E_{CB} = - E_{a} = - e ((), E_{onset}^{red} + 4.71) eV,

E_{VB} = - E_{c} = - e ((), E_{onset}^{ox} + 4.71) eV,

where

E_{onset}^{red}

and

E_{onset}^{ox}

is the energy of reduction reaction and oxidation reaction with step onset, respectively. The calculated values of E g , E CB , and E VB of the five samples are listed in Table .…”

Section: Resultssupporting

confidence: 75%

“…The peak at 1.02 eV is attributed to the oxidation process of PbS. The energy levels of E CB and E VB were calculated using the equations below 42 :…”

Section: Measurementsmentioning

confidence: 99%

Band gap engineered ternary semiconductor Pb_xCd_1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study

Boon-on

Lien

Chang

et al. 2020

Progress in Photovoltaics

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“…[13] In the past decade, binary semiconductor quantum dot materials, such as CdS, CdSe, CdTe, PbS or PbSe, have been employed as a sensitizer for quantum dot dye-sensitized solar cells (QDSSC). [14] However, most QDSSCs show a low power conversion efficiency (PCE) of up to 8%, due to their restricted light harvesting range. [15] Hence, to broaden the light absorption range, the binary sensitizer has been replaced by quaternary chalcopyrites, such as CIGSe or ZCISe, which have achieved PCEs of 11.49% and 12.57% as liquid junction QDSSCs, respectively.…”

Section: Introductionmentioning

confidence: 99%

Solution-processed Cd-substituted CZTS nanocrystals for sensitized liquid junction solar cells

Rondiya

Jadhav

Živković

et al. 2022

Journal of Alloys and Compounds

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“…However, their high toxicity brings adverse effects to living things and the environment, which are inconsistent with the main goal of solar cells as a clean and green energy generator. [16][17] SnS is cheap and less toxic than the above semiconductors, but only a few studies have focused on its application in PSCs. [18] SnS is an IV-VI type semiconductor, with an indirect bandgap of 1.0-1.2 eV and a direct bandgap of approximately 1.3 eV, and its PCE is as high as 25%.…”

Section: Introductionmentioning

confidence: 99%

High-performance perovskite solar cells obtained by hybridizing SnS quantum dots with CH3NH3PbI3

Zhou

Zhong

Fan

et al. 2021

Preprint

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In this work, SnS quantum dot (QDs) were added into the CH3NH3PbI3 (MAPI) perovskite precursor solution to fabricate MAPI/SnS QDs films with preferred (110) orientation and a perovskite film with large crystal size. This hybrid material showed increased light harvesting ability and a red shift with respect to the number of SnS QDs. As a result, an enhanced performance was achieved in the perovskite solar cells (PSCs) based on MAPI/SnS QDs prepared from the S5, exhibiting a maximum photoelectric conversion efficiency (PCE) of 10.15%, an open-circuit voltage (Voc) of 1.41 V and a fill factor (FF) of 65%.

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Systematic stacking of PbS/CdS/CdSe multi-layered quantum dots for the enhancement of solar cell efficiency by harvesting wide solar spectrum

Cited by 37 publications

References 34 publications

Band gap engineered ternary semiconductor Pb_xCd_1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study

Band gap engineered ternary semiconductor Pb_xCd_1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study

Solution-processed Cd-substituted CZTS nanocrystals for sensitized liquid junction solar cells

High-performance perovskite solar cells obtained by hybridizing SnS quantum dots with CH3NH3PbI3

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Systematic stacking of PbS/CdS/CdSe multi-layered quantum dots for the enhancement of solar cell efficiency by harvesting wide solar spectrum

Cited by 37 publications

References 34 publications

Band gap engineered ternary semiconductor PbxCd1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study

Band gap engineered ternary semiconductor PbxCd1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study

Solution-processed Cd-substituted CZTS nanocrystals for sensitized liquid junction solar cells

High-performance perovskite solar cells obtained by hybridizing SnS quantum dots with CH3NH3PbI3

Contact Info

Product

Resources

About

Band gap engineered ternary semiconductor Pb_xCd_1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study

Band gap engineered ternary semiconductor Pb_xCd_1−xS: Nanoparticle‐sensitized solar cells with an efficiency of 8.5% under 1% sun—A combined theoretical and experimental study