Systematic effects of Ti doping on the electronic properties of LaNiO3 thin films

Tomar, Sourav Singh; Yadav, Ekta; Soni, Kartik; Mavani, K. R.

doi:10.1007/s12034-021-02380-y

Cited by 4 publications

(6 citation statements)

References 21 publications

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“…Though the variation of τ (Λ) values with the Ni content seems to be weakly significant, an overall decreasing (increasing) trend in τ (Λ) values with Ni incorporation is noticed. Λ stands for the coherence of vibrational modes and measures the disorders in a system [43]. Variation of FWHM, i.e., Λ with Ni content indicates a plausible increase in disorder in Sb 2−x Ni x Te 3 samples [43,45] and corroborates with the B iso values.…”

Section: Vibrational Properties Andκsupporting

confidence: 64%

“…The schematic diagram corresponding to the Raman active phonon modes A 1 1g , E 2 g , A 2 1g of Nidoped Sb 2 Te 3 is displayed in figure 3. Careful observation reveals a blue shift in the peak position of vibrational phonon modes with Ni doping, indicating an increase of compressive strain with increasing Ni concentration [43]. In Sb 2−x Ni x Te 3 , Sb is replaced by Ni atoms of smaller atomic radii.…”

Section: Vibrational Properties Andκmentioning

confidence: 98%

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Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb₂Te₃

Mukherjee,

Rana,

Goswami

et al. 2024

J. Phys.: Condens. Matter

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Sb2Te3, a binary chalcogenide-based 3D topological insulator, attracts significant attention for its exceptional thermoelectric performance. We report the vibrational properties of magnetically doped Sb2Te3 thermoelectric material. Ni doping induces defect/disorder in the system and plays a positive role in engineering the thermoelectric properties through tuning the vibrational phonon modes. Synchrotron powder X-ray diffraction study confirms good crystalline quality and single-phase nature of the synthesized samples. The change in structural parameters, including Biso and strain, further corroborate with structural disorder. Detailed modification of phonon modes with doping and temperature variation is analysed from temperature-dependent Raman spectroscopic measurement. Compressive lattice strain is observed from the blue shift of Raman peaks owing to Ni incorporation in Sb site. An attempt is made to extract the lattice thermal conductivity from total thermal conductivity estimated through optothermal Raman studies. Hall concentration data support the change in temperature-dependent resistivity and thermopower. Remarkable increase in thermopower is observed after Ni doping. Simulation of the Pisarenko model, indicating the convergence of the valence band, explains the observed enhancement of thermopower in Sb2-xNixTe3. The energy gap between the light and heavy valence band at Γ point is found to be 30 meV (for Sb2Te3), which is reduced to 3 meV (in Sb1.98Ni0.02Te3). A significant increase in thermoelectric power factor is obtained from 715 μWm-1K-2 for pristine Sb2Te3 to 2415 μWm-1K-2 for Ni-doped Sb2Te3 sample. Finally, the thermoelectric figure of merit, ZT is found to increase by four times in Sb1.98Ni0.02Te3 than that of its pristine counterpart.

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Section: Vibrational Properties Andκsupporting

confidence: 64%

Section: Vibrational Properties Andκmentioning

confidence: 98%

Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb₂Te₃

Mukherjee,

Rana,

Goswami

et al. 2024

J. Phys.: Condens. Matter

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“…% Cu incorporated samples may be caused by the increased crystallite size as noticed in XRD. Also, the Raman modes were shifted slightly to the higher wavenumber side after Cu incorporation suggesting that Cu induces compressive strain in the samples …”

Section: Resultsmentioning

confidence: 99%

“…Also, the Raman modes were shifted slightly to the higher wavenumber side after Cu incorporation suggesting that Cu induces compressive strain in the samples. 43 Figure 3 shows the scanning electron microscopy (SEM) images of pristine and copper-incorporated Mn 3 O 4 thin films at a magnification of 40 KX. From the images, it is clear that the Cu addition has significantly changed the morphology of films.…”

Section: ■ Results and Discussionmentioning

confidence: 99%

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Elucidating the Role of Copper-Induced Mixed Phases on the Electrochemical Performance of Mn-Based Thin-Film Electrodes

Adoor,

Hegde,

Bhat

et al. 2023

ACS Omega

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Manganese oxide is a fascinating material for use as a thin-film electrode in supercapacitors. Herein, the consequences of copper incorporation on spray pyrolyzed manganese oxide thin films and their electrochemical performance were investigated. The Cu-incorporated manganese oxide thin films were deposited by spray pyrolysis, and their structural and electrochemical properties were thoroughly evaluated. The formation of the spinel Mn 3 O 4 phase with effective Cu incorporation was confirmed by X-ray diffraction investigation. Through Raman studies, it was noticed that mixed phases of manganese oxide tend to form after Cu incorporation, and this result was also reflected in X-ray photoelectron spectroscopic studies. The surface morphology and roughness were also altered by the addition of copper. However, electrochemical measurements implied a reduction in the specific capacitance upon copper inclusion. The cyclic voltammetry test indicated a specific capacitance of 132 F/g for Mn 3 O 4 electrodes, but a substantial drop for copper-incorporated samples due to the mixed manganese phase. The decremental tendency was further supported by galvanostatic charge–discharge studies and electrochemical impedance spectroscopic measurements. These results provide valuable insights into the effects of copper addition in manganese oxide thin-film-based electrodes for energy storage applications.

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Influencing the structural, vibrational and electronic properties of pulsed laser deposited PrNi0.95Cu0.05O3 thin films by tuning epitaxial strain

et al. 2021

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Systematic effects of Ti doping on the electronic properties of LaNiO3 thin films

Cited by 4 publications

References 21 publications

Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb₂Te₃

Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb₂Te₃

Elucidating the Role of Copper-Induced Mixed Phases on the Electrochemical Performance of Mn-Based Thin-Film Electrodes

Influencing the structural, vibrational and electronic properties of pulsed laser deposited PrNi0.95Cu0.05O3 thin films by tuning epitaxial strain

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Systematic effects of Ti doping on the electronic properties of LaNiO3 thin films

Cited by 4 publications

References 21 publications

Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb2Te3

Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb2Te3

Elucidating the Role of Copper-Induced Mixed Phases on the Electrochemical Performance of Mn-Based Thin-Film Electrodes

Influencing the structural, vibrational and electronic properties of pulsed laser deposited PrNi0.95Cu0.05O3 thin films by tuning epitaxial strain

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Product

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Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb₂Te₃

Tuning of thermoelectric performance by modulating vibrational properties in Ni-doped Sb₂Te₃