Synthetic semiconductor diamond electrodes: determination of acceptor concentration by linear and non-linear impedance measurements

Pleskov, Yu. V.; Mishuk, V. Ya.; Abaturov, M. A.; Елкин, В. В.; Krotova, M. D.; Varnin, V. P.; Teremetskaya, I. G.

doi:10.1016/0022-0728(95)04018-j

Cited by 27 publications

(13 citation statements)

References 3 publications

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“…where j = ð−1Þ 1/2 , σ represents ac electrical conductivity, and α represents the frequency dependence. Pleskov et al [45] reported that a CPE (with α close to 1) is a characteristic component of the equivalent circuit of boron-doped diamond.…”

Section: Journal Of Nanomaterialsmentioning

confidence: 99%

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

Zkria

Abubakr

Sittimart

et al. 2020

Journal of Nanomaterials

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Diamond films are candidate for a wide range of applications, due to their wide band gap, high thermal conductivity, and chemical stability. In this report, diamond-based heterojunction diodes (HJDs) were fabricated by growing n-type nanocarbon composite in the form of nitrogen-doped ultrananocrystalline diamond/amorphous carbon (UNCD/a-C:H:N) films onto p-type Si substrates. X-ray photoemission and the Fourier transform infrared spectroscopies were employed to examine the contribution of nitrogen atoms from the gas phase into the deposited films. The results indicate the incorporation of nitrogen atoms into the grain boundaries of UNCD/a-C:H film by replacing hydrogen atoms. The capacitance- (C-V-f), conductance- (G/ω-V-f), and series resistance-voltage characteristics of the fabricated Pd/n-(UNCD/a-C:H:N)/p-Si HJDs were studied in the frequency range of 40 kHz-2 MHz. The existence of interface states (Nss) and series resistance (Rs) were attributed to the interruption of the periodic lattice structure at the surface of the fabricated junction as well as the defects on the (UNCD/a-C:H:N)/Si interface. By increasing the frequency (≥500 kHz), the Nss reveals an almost frequency-independent behavior, which indicates that the charges at the interface states cannot follow ac signal at higher frequency. The obtained results demonstrated that the UNCD/a-C:H:N is a promising n-type semiconductor for diamond-based heterostructure diodes.

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Section: Journal Of Nanomaterialsmentioning

confidence: 99%

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

Zkria

Abubakr

Sittimart

et al. 2020

Journal of Nanomaterials

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“…Evstefeeva et al 69 investigated the dependence of capacitance on frequency in its application to the diamond electrode assuming that the electrode surface roughness should not necessarily lead to the appearance of CPE in its impedance. 70 The hypothesis 59 of slow ionisation of atoms with a deep-lying energy level (e.g., boron) in the space charge region of diamond crystals has been assumed for a tentative explanation of the frequency dispersion of the Mott ± Schottky plots of diamond electrodes. This explanation is supported by the fact that the magnitude of s varies regularly with changes in the thickness of the space charge layer (in conformity with Schottky's theory), whereas the magnitude of a is virtually independent of both the potential and the solution dilution, i.e., the factors influencing the electrode surface state.…”

Section: Synthetic Diamond Films As Electrodes: Resistance To Corrosi...mentioning

confidence: 99%

Synthetic diamond in electrochemistry

Pleskov¹

1999

Russ. Chem. Rev.

123

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“…The electrochemical behavior of quasi-metallic or semiconducting carbon materials, such as polycrystalline doped diamond with strong and nearly isotropic tetrahedral sp 3 bonding, or carbons with sp 2 hybridization, such as disordered glass-like carbon or highly oriented pyrolytic graphite, are described in the literature [41][42][43][44][45][46][47][48][49]. Compared to sp 2 materials, doped diamonds have a wider electrochemical potential window in aqueous media and they are (electro)chemically more stable.…”

Section: Introductionmentioning

confidence: 99%

In Situ Raman Microdroplet Spectroelectrochemical Investigation of CuSCN Electrodeposited on Different Substrates

et al. 2021

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Systematic in situ Raman microdroplet spectroelectrochemical (Raman-μSEC) characterization of copper (I) thiocyanate (CuSCN) prepared using electrodeposition from aqueous solution on various substrates (carbon-based, F-doped SnO2) is presented. CuSCN is a promising solid p-type inorganic semiconductor used in perovskite solar cells as a hole-transporting material. SEM characterization reveals that the CuSCN layers are homogenous with a thickness of ca. 550 nm. Raman spectra of dry CuSCN layers show that the SCN− ion is predominantly bonded in the thiocyanate resonant form to copper through its S−end (Cu−S−C≡N). The double-layer capacitance of the CuSCN layers ranges from 0.3 mF/cm2 on the boron-doped diamond to 0.8 mF/cm2 on a glass-like carbon. In situ Raman-μSEC shows that, independently of the substrate type, all Raman vibrations from CuSCN and the substrate completely vanish in the potential range from 0 to −0.3 V vs. Ag/AgCl, caused by the formation of a passivation layer. At positive potentials (+0.5 V vs. Ag/AgCl), the bands corresponding to the CuSCN vibrations change their intensities compared to those in the as-prepared, dry layers. The changes concern mainly the Cu−SCN form, showing the dependence of the related vibrations on the substrate type and thus on the local environment modifying the delocalization on the Cu−S bond.

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Synthetic semiconductor diamond electrodes: determination of acceptor concentration by linear and non-linear impedance measurements

Cited by 27 publications

References 3 publications

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

Analysis of Electrical Characteristics of Pd/n-Nanocarbon/p-Si Heterojunction Diodes: By C-V-f and G/w-V-f

Synthetic diamond in electrochemistry

In Situ Raman Microdroplet Spectroelectrochemical Investigation of CuSCN Electrodeposited on Different Substrates

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