Rhenium is both ar efractory metal and an oble metal that has attractive properties for various applications. Still, synthesis and applications of rhenium thin films have been limited. We introduce herein the growth of both rhenium metal and rhenium nitride thin films by the technologically important atomic layer deposition (ALD) method over awide deposition temperature range using fast, simple,a nd robust surface reactions between rhenium pentachloride and ammonia. Films are grown and characterized for compositions, surface morphologies and roughnesses,c rystallinities,a nd resistivities.C onductive rhenium subnitride films of tunable composition are obtained at deposition temperatures between 275 and 375 8 8C, whereas pure rhenium metal films growa t 400 8 8Ca nd above. Even aj ust 3nmt hickr henium film is continuous and has al ow resistivity of about 90 mW cm showing potential for applications for whicha lso other noble metals and refractory metals have been considered.