We have performed a theoretical study of the electronic band structure, density of states, dielectric function and absorption coefficient of isostructural BaSi 2 , BaGe 2 and SrGe 2 compounds by means of different ab initio methods. All materials are found to be indirect band-gap semiconductors displaying almost equal dispersion of bands close to the gap region. The energy gaps of 0.83, 0.57 and 0.44 eV are estimated for BaSi 2 , BaGe 2 and SrGe 2 , respectively. Analysis of the absorption coefficient of BaSi 2 in comparison with data for other semiconducting silicides indicates its prospects for a solar cell application.