2017
DOI: 10.1016/j.jssc.2016.12.011
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Synthesis, structural, electronic and linear electro-optical features of new quaternary Ag2Ga2SiS6 compound

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Cited by 12 publications
(4 citation statements)
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“…The new ternary and quaternary chalcogenides are gradually approved as promising materials for its NLO properties and the transparent region which can be modulated with the composition. AgGaGeS 4 crystal is just one of the solid solution crystal AgGaS 2 – n GeS 2 ( n = 1) and becomes a popular research subject. , It has a high nonlinear optical coefficient ( d 31 = 15 pm/V), a wide transmission range (0.5–11.5 μm), and a low residual absorption coefficient (0.05 cm –1 at 1.064 μm), which make it a promising material for frequency-shifting 1.064 μm Nd:YAG laser into the range of 4–11 μm. However, the other AgGaS 2 – n GeS 2 ( n = 2, 3, 4, and 5) crystals, i.e., AgGaGe 2 S 6 , AgGaGe 3 S 8 , AgGaGe 4 S 10 and AgGaGe 5 S 12 , which are rarely reported, also have the comparable NLO properties. The nonlinear optical coefficients of AgGaGe 3 S 8 and AgGaGe 4 S 10 crystal are d 31 = 13.65 and 13.8 pm/V, respectively, which are very close to that of AgGaGeS 4 .…”
Section: Introductionmentioning
confidence: 99%
“…The new ternary and quaternary chalcogenides are gradually approved as promising materials for its NLO properties and the transparent region which can be modulated with the composition. AgGaGeS 4 crystal is just one of the solid solution crystal AgGaS 2 – n GeS 2 ( n = 1) and becomes a popular research subject. , It has a high nonlinear optical coefficient ( d 31 = 15 pm/V), a wide transmission range (0.5–11.5 μm), and a low residual absorption coefficient (0.05 cm –1 at 1.064 μm), which make it a promising material for frequency-shifting 1.064 μm Nd:YAG laser into the range of 4–11 μm. However, the other AgGaS 2 – n GeS 2 ( n = 2, 3, 4, and 5) crystals, i.e., AgGaGe 2 S 6 , AgGaGe 3 S 8 , AgGaGe 4 S 10 and AgGaGe 5 S 12 , which are rarely reported, also have the comparable NLO properties. The nonlinear optical coefficients of AgGaGe 3 S 8 and AgGaGe 4 S 10 crystal are d 31 = 13.65 and 13.8 pm/V, respectively, which are very close to that of AgGaGeS 4 .…”
Section: Introductionmentioning
confidence: 99%
“…This structural arrangement is related to the one in the tetragonal quaternary selenide Ag 2 Ga 2 SiSe 6 ( Fig. 4f), that exhibits a three-dimensional framework composed of corner-sharing [(Ga/Si)Se 4 ] and [AgSe 4 ] tetrahedra with empty cavities [17]. In the disordered crystal structure of Ag 2 Ga 2 SiSe 6 the Ga and Si atoms form a statistical mixture, while the Ag atoms partially occupy the 4b site.…”
Section: Resultsmentioning
confidence: 63%
“…They all crystallize in either of two structures. The monoclinic structure (space group Cc) is typical of indium-containing compounds (Ag 2 In 2 Si(Ge)S 6 [14], Ag 2 In 2 SiSe 6 [15], Ag 2 In 2 GeSe 6 [16]), while compounds with Ga (Ag 2 Ga 2 SiS 6 [17], Ag 2 Ga 2 SiSe 6 [18]) crystallize in the tetragonal structure (space group I4 ̅ 2d). Finally, unique cases of this composition are known in a copper-containing system Cu 2 In 2 SiS 6 (space group Cc) [19] and in a combination with thallium, Tl 2 In 2 SnSe 6 (space group I4/mcm) [20].…”
Section: Introductionmentioning
confidence: 99%
“…They crystallize in two structures. The monoclinic structure (space group (SG) Cc) is typical of In compounds (Ag2In2Si(Ge)S6 [2], Ag2In2SiSe6 [3], Ag2In2GeSe6 [4]), whereas in cases where III is Ga the structure is the tetragonal SG I-42d (Ag2Ga2SiS6 [5], Ag2Ga2SiSe6 [6]). Only one compound of this composition is known in the copper-containing systems, but the Cu2In2SiS6 compound (SG Cc) [7] is endothermic and exists in a fairly narrow temperature range 1107 -1233 K. The 1-1-1-4 compounds form in both copper-and silver-based systems and are more diverse in structure.…”
Section: Introductionmentioning
confidence: 99%