AgGaGe
n
S2(n+1) crystal
is a series of quaternary nonlinear optical materials for
mid-IR laser applications of converting a 1.064 μm pump signal
(Nd:YAG laser) to 4–11 μm laser output, but only AgGaGeS4 has attracted the most attention, remaining the other promising
AgGaGe
n
S2(n+1) crystal whose physicochemical properties can be modulated by n value. In this work, AgGaGe
n
S2(n+1) (n = 2, 3, 4,
and 5) polycrystals are synthesized by vapor transport and mechanical
oscillation method with different cooling processes. High-resolution
X-ray diffraction analysis and refinement have revealed that all the
four compounds are crystallized in the noncentrosymmetric orthorhombic
space group Fdd2, resulting in the excellent nonlinear
optical property, and the distortion of tetrahedron with the variation
of n value causes the discrepancy of physicochemical
property. Besides, using the modified Bridgman method, AgGaGe
n
S2(n+1) single
crystals with 15 mm diameter and 20–40 mm length have been
grown. We have discussed the structure and composition of AgGaGe
n
S2(n+1) by XPS
spectra and analyzed the three kinds of vibration modes of tetrahedral
clusters by the Raman spectra. The Hall measurement indicates that
the AgGaGe
n
S2(n+1) single crystals are p-type semiconductor, and the carrier concentration
decreases with the increasing n value. All the transmittances
of as-grown AgGaGe
n
S2(n+1) samples exceeds 60% in the transparent range, especially
the transmittance of AgGaGe2S6, is up to 70%
at 1064 nm, and the band gap of as-grown crystal increases from 2.85
eV for AgGaGe2S6 to 2.92 eV for AgGaGe5S12. After a thermal annealing treatment, the absorptions
at 2.9, 4, and 10 μm have been eliminated, and the band gap
changed into the range of 2.89–2.96 eV.