Synthesis, Properties and Aging of ICP-CVD SiCxNy:H Films Formed from Tetramethyldisilazane

Abstract

Amorphous hydrogenated silicon carbonitride films were synthesized on Si(100), Ge(111), and fused silica substrates using the inductively coupled plasma chemical vapor deposition technique. 1,1,3,3-tetramethyldisilazane (TMDSN) was used as a single-source precursor. The effect of the precursor’s pressure in the initial gas mixture, the substrate temperature, the plasma power, and the flow rate of nitrogen gas as an additional reagent on the film growth rate, element composition, chemical bonding, wettability of film surface, and the optical and mechanical properties of a-SiCxNy:H films was investigated. In situ diagnostic studies of the gas phase have been performed by optical emission spectroscopy during the film deposition process. The long-term stability of films was studied over a period of 375 days. Fourier-transform infrared (FTIR) and X-ray energy dispersive spectroscopy (EDX), and wettability measurements elucidated the oxidation of the SiCxNy:H films deposited using TMDSN + N2 mixture. Films obtained from a mixture with argon had high stability and maintained the stability of element composition after long-term storage in ambient air.

Controlling of Chemical Bonding Structure, Wettability, Optical Characteristics of SiCN:H (SiC:H) Films Produced by PECVD Using Tetramethylsilane and Ammonia Mixture

“…The value of WCA was equal to 71°for the initial sample, which may be regarded as slightly hydrophilic film. This result is in consideration with the WCA data presented in literature for SiCN:H films deposited using different precursors: for tetramethyldisilazane it varied in the range of 62-78° [45], hexamethyldisilazane-78-83° [72], and bis(dimethylamino)dimethylsilane-56-78° [46]. The plasma treatment of the sample resulted in a drastic decrease in WCA to 36-42°.…”

“…Si-C stretching 790 796-805 [41] N-Si 3 asymmetric stretching 840 850 [30] Si-N stretching 920 911 [41] Si-CH x -Si wagging 1040 1020 [42] Si-CH 3 symmetric bending 1255 1260 [42] C-H symmetric deformation 1354 1335-1390 [43] C=C/C=N stretching 1650 1500 (C=C) 1600 (C=N) [7] SiH n stretching (n = 1-3) 2110 2000-2100 [44] C≡N 2200 2200 [42,45] C-H stretching 2865 2905 2956 2896-2953 [41] N-H stretching 3400 3382 [41] The IR spectra of all films obtained under the conditions of a low-power plasma using helium as a plasma-forming gas (Figure 2a) contain absorption bands in the regions of 790 cm −1 , 1020-1040 cm −1 , ~1600 cm −1 , corresponding to Si-C, Si-CH x -Si, and C=C vibration modes, which indicates the polymerization of the precursor with a formation of silicon-carbon-silicon chains with incorporation of large hydrocarbon fragments. The intensity of Si-C signal increased with rise of deposition temperature.…”

Eco-Friendly Synthesis of Silica-Polysaccharide Nano-composites using Sodium Silicate and Aloe Vera Gel for Self-cleaning Solar energy Mirrors

“…showing two or more overlapping bands. The peaks located at (785 cm -1 , 788 cm -1 , 788 cm -1 ) of C 1 , C 2 , and C 3 respectively, were indicated to the vibration symmetry of Si-O-Si and Si-C frameworks (Chagin et al, 2022). The peaks located at (432-433-433 cm -1 ) of C 1 , C 2 , and C 3 respectively, were indicated to the bending vibrations of Si-O-Si framework (Wardhani et al, 2017).…”

Amorphous silicon carbonitride (a‐SiCN) thin film coatings by remote plasma chemical vapor deposition using organosilicon precursor: Effect of substrate temperature

“…Among a variety of silicon‐based coatings amorphous silicon carbonitride (a‐SiCN) films, owing to their superior useful properties, attract unceasingly great interest. [ 1–5 ] This material exhibits high hardness, [ 6–26 ] low friction coefficient, [ 14,18,22 ] strong adhesion to the substrate, [ 11 ] wide optical bandgap, [ 6,27–29 ] good resistance to wear, [ 22,23 ] high photosensitivity in the UV region, [ 30 ] good field emission characteristics, [ 31–34 ] low electrical conductivity, [ 28,29 ] and good moisture barrier properties. [ 34 ] The polycrystalline SiCN material formed by the pyrolysis of polyhydridomethylsilazane revealed outstanding resistance to oxidation at high temperatures up to 1600°C.…”