Synthesis of ZnS/Al2O3/TaSe2 Core/Shell Nanowires Using Thin Ta Metal Film Precursor

Abstract

This study introduces a novel approach for fabricating ZnS/Al2O3/TaSe2 heterostructured core/shell nanowires (NWs) through the selenization of a metallic Ta thin film precursor. The synthesis process involves a meticulously designed four-step protocol: (1) generating ZnS NWs on an oxidized silicon substrate, (2) encapsulating these NWs with a precisely controlled thin Al2O3 layer via atomic layer deposition (ALD), (3) applying a Ta precursor layer by magnetron sputtering, and (4) annealing in a Se-rich environment in a vacuum-sealed quartz ampoule to transform the Ta layer into TaSe2, resulting in the final core/shell structure. The characterization of the newly produced NWs using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS) was validated using the integrity and composition of the heterostructures. Our method not only establishes a new pathway for the synthesis of TaSe2-based core/shell NWs but also extends the potential for creating a variety of core/shell NW systems with chalcogenide shells by adapting the thin film metal precursor approach. This versatility opens the way for future advancements in nanoscale material applications, particularly in electronics and optoelectronics where core/shell geometries are increasingly important.