Synthesis of ZnO/Si Hierarchical Nanowire Arrays for Photocatalyst Application

Li, Ding-Guo; Yan, Xiaolan; Lin, Chunhua; Huang, Shengli; Tian, Z. Ryan; He, Bing; Yang, Qianqian; Yu, Bo; He, Xu; Li, Jing; Wang, Jiayuan; Zhan, Huahan; Li, Shuping; Kang, Junyong

doi:10.1186/s11671-016-1803-0

Cited by 23 publications

(3 citation statements)

References 37 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…As a substitute for conventional SiO 2 /n-type Si metal-oxide-semiconductor field-effect-transistors (MOSFETs), the combination of different higher dielectric constant ( k ) oxides along with In x Ga 1−x As ( x > 0.5) as a channel material has been extensively investigated for its potential equivalent oxide thickness (EOT) scaling and use in forthcoming logic-applicable devices that will require high-speed and depressed power consumption 1–5 . Among the different high dielectric constant ( k ) oxides, studies on Al 2 O 3 , HfO 2 , La 2 O 3 , ZrO 2 , and their nanolaminate and nano-mixture structures have already been reported 6–11 .…”

Section: Introductionmentioning

confidence: 99%

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Rahman

Kim

et al. 2019

Sci Rep

View full text Add to dashboard Cite

This study presents a model to calculate the border trap density (N bt ) of atomic layer deposition high- k onto In 0.53 Ga 0.47 As on a 300-mm (001) Si substrate. This model considers the quantum confinement effect and band nonparabolicity. Capacitance-equivalent thickness (CET) was used to reflect the distance of the charge centroid from the oxide–semiconductor interface. The border trap values based on CET were found to be approximately 65% lower than the extracted values based on physical thickness in the In 0.53 Ga 0.47 As material. In an investigation of two different post-metal annealing effects on border traps, the border trap was more effectively passivated by N 2 -based forming gas annealing (FGA) compared with rapid thermal annealing (RTA), whereas a lower interface state density was observed in RTA-annealed samples compared with FGA-annealed samples. N bt extraction at different bias voltages demonstrated that the applied frequencies travel deep into the oxide and interact with more traps as more the Fermi level passes the conduction band, thus creating tunneling with the carriers.

show abstract

Section: Introductionmentioning

confidence: 99%

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Rahman

Kim

et al. 2019

Sci Rep

View full text Add to dashboard Cite

show abstract

“…Most of these semiconductor photocatalysts have a band gap in the UV region that is equal to or greater than 3.2 eV (l = 387 nm) [11]. Semiconductor photocatalysts are the key materials to complete the mineralization of a wide range of dyes and organic compounds [12].…”

Section: Introductionmentioning

confidence: 99%

Photocatalytic Performance of Zinc Oxide and Metal‐Doped Zinc Oxide for Various Organic Pollutants

et al. 2023

View full text Add to dashboard Cite

Zinc oxide (ZnO) has a high photocatalytic potential to decompose volatile organic pollutants into CO2 and H2O which depend on their physical properties, such as particle shape and size, band gap, type of dopant, and optical and structural properties. Using 93 references listed in this review, the relationship between metal dopant and synthesis methods to the efficiency of ZnO and composite ZnO‐metal in degrading pollutants for photocatalyst applications is studied. The basic principles of the photocatalyst process is described when the electrons at the valence band of ZnO get the energy from solar spectrum, generate the charge (electron and hole), and then continue to react with superoxide and water, resulting in radical atoms which break the bonds of organic pollutants. Rare earth dopants have the highest efficiency up to 100 % at 15 min irradiation. Conclusions and future prospects of ZnO and metal‐doped ZnO are also discussed. Perspectives and challenges of the future development of ZnO‐based photocatalysts are evaluated.

show abstract

“…Having access to branched nanowires of these materials will increase the surface area interacting with the surrounding environment. This will ultimately lead to more absorption, hence a better detection ability …”

Section: Introductionmentioning

confidence: 99%

Sb Incorporation in Wurtzite and Zinc Blende InAs₁₋_xSb_x Branches on InAs Template Nanowires

Dahl

Namazi

Zamani

et al. 2018

Small

View full text Add to dashboard Cite

The physical properties of material largely depend on their crystal structure. Nanowire growth is an important method for attaining metastable crystal structures in III-V semiconductors, giving access to advantageous electronic and surface properties. Antimonides are an exception, as growing metastable wurtzite structure has proven to be challenging. As a result, the properties of these materials remain unknown. One promising means of accessing wurtzite antimonides is to use a wurtzite template to facilitate their growth. Here, a template technique using branched nanowire growth for realizing wurtzite antimonide material is demonstrated. On wurtzite InAs trunks, InAs Sb branch nanowires at different Sb vapor phase compositions are grown. For comparison, branches on zinc blende nanowire trunks are also grown under identical conditions. Studying the crystal structure and the material composition of the grown branches at different x shows that the Sb incorporation is higher in zinc blende than in wurtzite. Branches grown on wurtzite trunks are usually correlated with stacking defects in the trunk, leading to the emergence of a zinc blende segment of higher Sb content growing parallel to the wurtzite structure within a branch. However, the average amount of Sb incorporated within the branch is determined by the vapor phase composition.

show abstract

Synthesis of ZnO/Si Hierarchical Nanowire Arrays for Photocatalyst Application

Cited by 23 publications

References 37 publications

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Photocatalytic Performance of Zinc Oxide and Metal‐Doped Zinc Oxide for Various Organic Pollutants

Sb Incorporation in Wurtzite and Zinc Blende InAs₁₋_xSb_x Branches on InAs Template Nanowires

Contact Info

Product

Resources

About

Synthesis of ZnO/Si Hierarchical Nanowire Arrays for Photocatalyst Application

Cited by 23 publications

References 37 publications

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Border Trap Extraction with Capacitance- Equivalent Thickness to Reflect the Quantum Mechanical Effect on Atomic Layer Deposition High-k/In0.53Ga0.47As on 300-mm Si Substrate

Photocatalytic Performance of Zinc Oxide and Metal‐Doped Zinc Oxide for Various Organic Pollutants

Sb Incorporation in Wurtzite and Zinc Blende InAs1−xSbx Branches on InAs Template Nanowires

Contact Info

Product

Resources

About

Sb Incorporation in Wurtzite and Zinc Blende InAs₁₋_xSb_x Branches on InAs Template Nanowires