2021
DOI: 10.1016/j.jallcom.2021.160487
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Synthesis of ZnO/NiO hollow spheres and their humidity sensing performance

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Cited by 18 publications
(12 citation statements)
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“…On the other hand, the introduction of oxygen vacancies not only improves the separation efficiency of optical carriers as trap centers, but also produces defect-related states near the valence band, resulting in a narrower band gap and enhanced light absorption. In fact, the doping of Ni 2+ and the appropriate oxygen vacancy concentration promote the production of •O 2− to a certain extent [ 35 ]. It is generally believed that the increase in oxygen vacancy concentration is beneficial to the capture of photogenerated electrons, thus improving the separation ability of photogenerated electrons and holes, and promoting the photocatalytic degradation of dyes and antibiotics into CO 2 and H 2 O [ 33 ].…”
Section: Resultsmentioning
confidence: 99%
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“…On the other hand, the introduction of oxygen vacancies not only improves the separation efficiency of optical carriers as trap centers, but also produces defect-related states near the valence band, resulting in a narrower band gap and enhanced light absorption. In fact, the doping of Ni 2+ and the appropriate oxygen vacancy concentration promote the production of •O 2− to a certain extent [ 35 ]. It is generally believed that the increase in oxygen vacancy concentration is beneficial to the capture of photogenerated electrons, thus improving the separation ability of photogenerated electrons and holes, and promoting the photocatalytic degradation of dyes and antibiotics into CO 2 and H 2 O [ 33 ].…”
Section: Resultsmentioning
confidence: 99%
“…Moreover, the formation of a p–n heterojunction at the interface between n-type ZnO and p-type NiO plays an important role in improving the performance. Due to the difference in band gap and Fermi level between the p-type NiO and n-type ZnO, they form a p–n heterojunction at the interface through charge carrier transport, thus increasing the barrier height and generating an additional depletion region [ 35 ]. As a result, the p–n heterojunction formed when the composite is exposed to air enables the sensor to exhibit a higher resistance.…”
Section: Resultsmentioning
confidence: 99%
“…In addition, a heterojunction will form between g-C 3 N 4 nanosheets and TiO 2 nanoparticles, which can play an important role in humidity detection . When the g-C 3 N 4 and TiO 2 are contacted, electrons can migrate from TiO 2 to g-C 3 N 4 until the Fermi level reaches equilibrium, resulting in a wild depletion layer at the interface between the two semiconductor materials as well as a high impedance state (Figure e) .…”
Section: Results and Discussionmentioning
confidence: 99%
“…To adapt to the low-temperature resistance of plastic food packaging, we developed a low-temperature process based on NIR laser annealing to produce the SnO 2 -sensing layer. A literature survey reveals that metal oxide semiconductors (ZnO, SnO 2 , ITO, WO 3 , CuO, NiO) [31][32][33][34][35][36] are good candidates for humidity sensing. Metal oxide semiconductor (MOx)-based humidity sensors can be fabricated with a low-cost solution process to exhibit high sensitivity and a fast response [37].…”
Section: Introductionmentioning
confidence: 99%