Synthesis of ZnO nanorods on GaN epitaxial layer and Si (100) substrate using a simple hydrothermal process

Jang, Jae-Min; Kim, Jin‐Yeol; Jung, Woo-Gwang

doi:10.1016/j.tsf.2008.05.017

Cited by 21 publications

(9 citation statements)

References 27 publications

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“…The strong near-band-edge emission along with the drastically reduced defect emission of ZnO-NRs grown on poor structural quality, polycrstalline GaN-BL suggests that this behavior does not originate from the structural quality of epitaxial GaN-BL, as has been inferred earlier [2]. The high optical quality of ZnO-NRs on GaN-BL indicates a possible role of the aqueous medium and solution mediated interfacial reaction between GaN and ZnO during the growth of ZnO-NRs, which may lead to incorporation of gallium at ZnO-GaN interface, which has been reported to suppress the defect emission of ZnO-NRs [4].…”

supporting

confidence: 57%

“…ZnO and GaN have similar crystal structures with small lattice mismatch (~ 1.8%) and similar optical properties, including the refractive index. For these applications, ZnO nanorods have been grown on high structural quality, epitaxial GaN on sapphire [2]. In the present work, ZnO nanorods (NRs) have been grown by CBD process on sputtered, polycrystalline GaN buffer layers (BL) over quartz substrates.…”

Section: Introductionmentioning

confidence: 99%

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Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

Nandi¹,

Mohan²,

Srinivasa³

et al. 2014

AIP Conference Proceedings

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Articles you may be interested inEffect of Ga-doped ZnO seed layer thickness on the morphology and optical properties of ZnO nanorods AIP Conf.Effect of buffer layer and substrate surface polarity on the growth by molecular beam epitaxy of GaN on ZnO Abstract. ZnO nanorods were grown by chemical bath deposition on sputtered, polycrystalline GaN buffer layers with and without ZnO seed layer. Scanning electron microscopy and X-ray diffraction show that the ZnO nanorods on GaN buffer layers are not vertically well aligned. Photoluminescence spectrum of ZnO nanorods grown on GaN buffer layer, however exhibits a much stronger near-band-edge emission and negligible defect emission, compared to the nanorods grown on ZnO buffer layer. These features are attributed to gallium incorporation at the ZnO-GaN interface. The introduction of a thin (25 nm) ZnO seed layer on GaN buffer layer significantly improves the morphology and vertical alignment of ZnO-NRs without sacrificing the high optical quality of ZnO nanorods on GaN buffer layer. The presence of a thick (200 nm) ZnO seed layer completely masks the effect of the underlying GaN buffer layer on the morphology and optical properties of nanorods.

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confidence: 57%

Section: Introductionmentioning

confidence: 99%

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

Nandi¹,

Mohan²,

Srinivasa³

et al. 2014

AIP Conference Proceedings

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“…The chemistry of the hydrothermal growth of ZnO nanocrystals is well reported elsewhere [11][12][13]. Zinc nitrate salt provide 2+ ions required for building up the ZnO NRs while hexamethylenetetramine hydrolyzes to produce formaldehyde and ammonia.…”

Section: Resultsmentioning

confidence: 97%

The influence of precursor concentration on the crystallinity and morphology of ZnO nanorods grown on the printed circuit board substrate

Hong

2020

2020 International Conference on Information Technology and Nanotechnology (ITNT)

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In this work, the influence of precursor concentration on the surface morphologies, and the crystallinity of ZnO nanorods (NRs) grown on printed circuit board substrates (PCBs) is presented. It was shown that by implementing a galvanic cell structure in an aqueous solution of equimolar concentration of zinc nitrate hexahydrate (Zn[NO3] 2 •6H 2 O) and hexamethylenetetramine (C 6 H 12 N 4), ZnO NRs can directly grow on the PCBs substrate without the assistance of a seed layer. It has been shown that the vertical growth and the crystallinity of the ZnO NRs can also be significantly improved by increasing the equimolar precursor concentrations. The morphologies of the ZnO nanorods were investigated by scanning electron microscope (SEM) and X-ray diffraction (XRD). The crystallinity properties were characterized by Raman spectroscopy and photoluminescence (PL) spectroscopy.

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“…The forward current is approximately 12uA at 10 V, and the turn-on voltage is 6 V. The break down voltage of our result is much smaller than the reported value, the reason should because the high defect density in the interface between regrown n-ZnO and p-GaN template, which might cause some leakage current when applied even small reversed voltage. The turn-on voltage and power consumption exceed those of conventional LEDs, the relatively low forward and reverse threshold voltages are probably due to the existence of interface defects [28,29]. The EL spectra of the devices were studied as a function of the dc drive current, as shown in Fig.…”

mentioning

confidence: 99%

Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

Chen

Hung

Lee

et al. 2011

Opt. Mater. Express

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Nonpolar (100) m-plane n-ZnO/p-GaN light-emitting-diodes (LEDs) were grown by chemical vapor deposition on p-GaN templates which was grown by metalorganic chemical vapor deposition on LiAlO 2 (100) substrate. Direct current (DC) electroluminescence (EL) measurements yielded a peak at 458nm. The EL peak position was independent of drive current and a full width of half maximum (FWHM) of 21.8 nm was realized at 20mA. The current-voltage characteristics of these diodes showed a forward voltage (V f) of 6V with a series resistance of 2.2 × 10 5 Ω.

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Synthesis of ZnO nanorods on GaN epitaxial layer and Si (100) substrate using a simple hydrothermal process

Cited by 21 publications

References 27 publications

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

Effect of ZnO seed layer on the morphology and optical properties of ZnO nanorods grown on GaN buffer layers

The influence of precursor concentration on the crystallinity and morphology of ZnO nanorods grown on the printed circuit board substrate

Nonpolar light emitting diode made by m-plane n-ZnO/p-GaN heterostructure

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