Synthesis of ZnO nanorod and the annealing effect on its photoluminescence property

Wu, Lili; Wu, Youshi; Pan, Xiaoru; Kong, F.

doi:10.1016/j.optmat.2005.03.007

Cited by 242 publications

(127 citation statements)

References 16 publications

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“…or V Zn levels that are created in oxygen-rich conditions, 33,[41][42][43][44] as confirmed by DLTS. 36,37 In order to confirm the type of defects in these samples, PL measurements were carried out for the vacuum-annealed Sample D3 grown at 100 mTorr (Figure 4(c)).…”

Section: Resultsmentioning

confidence: 55%

Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

Flemban

Sequeira

Zhang

et al. 2016

Journal of Applied Physics

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Gd-doped ZnO thin films were prepared using pulsed laser deposition at different oxygen pressures and varied Gd concentrations. The effects of oxygen deficiency-related defects on the Gd incorporation, optical and structural properties, were explored by studying the impact of oxygen pressure during deposition and post-growth thermal annealing in vacuum. Rutherford Backscattering Spectrometry revealed that the Gd concentration increases with increasing oxygen pressure for samples grown with the same Gd-doped ZnO target. Unexpectedly, the c-lattice parameter of the samples tends to decrease with increasing Gd concentration, suggesting that Gd-defect complexes play an important role in the structural properties. Using low-temperature photoluminescence (PL), Raman measurements and density functional theory calculations, we identified oxygen vacancies as the dominant intrinsic point defects. PL spectra show a defect band related to oxygen vacancies for samples grown at oxygen deficiency. V C 2016 AIP Publishing LLC.

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Section: Resultsmentioning

confidence: 55%

Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

Flemban

Sequeira

Zhang

et al. 2016

Journal of Applied Physics

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“…The green/yellow emission reaches a maximum at 22 min after which it decreases concomitant with a visible degradation of the film. The orange/red emissions (2.10 eV and 1.85 eV) are usually associated with radiative transitions related to excess oxygen, primarily as interstitial (0 ; ) defects [26]. Hence the increase in the orange/red DLE with annealing temperature observed here could be an indication of removal of non-radiative defects through annealing, promoting the radiative transfer associated with excess oxygen defects.…”

Section: Photon Energy (Ev)mentioning

confidence: 63%

Intrinsic photoluminescence from low temperature deposited zinc oxide thin films as a function of laser and thermal annealing

Tsakonas¹,

Cranton²,

Li³

et al. 2013

J. Phys. D: Appl. Phys.

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Abstract. An investigation into the modification of low temperature deposited ZnO thin films by different annealing processes has been undertaken using laser, thermal and rapid thermal annealing of 60nm ZnO films deposited by Hi-Target-Utilization-Sputtering. Single pulse laser annealing using a KrF excimer laser ( A = 248nm) over a range of fluences up to 315 mJ/cm 2 demonstrates controlled indepth modification of internal film microstructure and luminescence properties without the film degradation produced by high temperature thermal and RTA processes. Photoluminescence properties show that the ratio of defect related deep level emission (DLE, 450nm -750nm, 2.76eV-1.65eV) to excitonic near band-edge emission (NBE at 381nm, 3.26eV) is directly correlated to processing parameters. Thermal and rapid thermal processing results in the evolution of a strong visible orange/red DLE photoluminescence (with peaks at 590nm, 2.10eV and 670nm, 1.85eV) dominated by defects related to excess oxygen. At higher temperatures, the appearance of a green/yellow emission (530nm, 2.34eV) indicates a transition of the dominant radiative transfer mechanism. In contrast, laser processing removes defect related DLE and produces films with intense NBE luminescence, correlated to the observed formation of large grains (25-40nm IntroductionThin films of ZnO are of interest across a range of optoelectronic and sensor device applications due to ZnO being a wide gap (>3 eV) n-type semiconductor with a high exciton binding energy [1] and a piezoelectric response [2]. Poly crystalline thin films of ZnO are deposited by a variety of physical and chemical vapour methods, with sputtering [1] being a preferred choice for low cost and scalability. However, to achieve the desired thin film properties, particularly for low temperature deposited films, it is critical to control grain microstructure, surface morphology, and internal defects [3]. Techniques that have been previously reported to improve these properties of ZnO thin films include post deposition thermal annealing [4,5], rapid thermal annealing [6,7], and laser annealing [8,9,10]. In this paper we present the results from a comparative study of the effect of all three of these annealing processes on the microstructure, crystallinity and associated intrinsic photoluminescence properties of low temperature sputter deposited ZnO thin films. The results demonstrate that pulsed laser annealing is a powerful tool for the controlled modification of low temperature deposited thin films. In particular, the work presented here explores the effect of a more comprehensive range of laser processing parameters on low temperature ZnO thin films than previously reported. The results

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“…The emission at 1.9 eV was proposed to be due to transitions related to oxygen interstitial (O i ) [32], and the orange-red emission was recently attributed to transitions associated with zinc vacancy (V Zn ) complexes [33]. Experimental results associate this luminescence with oxygen-rich conditions [34] and red luminescence has been assigned to transitions involving V Zn , and due to transitions associated with Zn i [35]. Additionally, crystal-field splitting of transition-metal impurities can lead to internal transitions emitting red emission.…”

Section: Defect-related Color Centers In Znomentioning

confidence: 93%

Zinc Oxide Nanophotonics

Choi

Aharonovich

2015

Nanophotonics

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Abstract:The emerging field of nanophotonics initiated a dedicated study of single photon sources and optical resonators in new class of materials. One such material is zinc oxide (ZnO) that has been long considered only for classical light-emitting applications. However, it recently showed promise for quantum photonics technologies. In this review, we highlight the recent advances in studying single emitters in ZnO, engineering of optical cavities and practical nanophotonics devices including nanolasers and electrically triggered devices. We finalize with an outlook at this promising area, as well as provide perspectives and open questions in solid state nanophotonics employing ZnO.

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Synthesis of ZnO nanorod and the annealing effect on its photoluminescence property

Cited by 242 publications

References 16 publications

Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

Identifying the influence of the intrinsic defects in Gd-doped ZnO thin-films

Intrinsic photoluminescence from low temperature deposited zinc oxide thin films as a function of laser and thermal annealing

Zinc Oxide Nanophotonics

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