Synthesis of WS2 by Chemical Vapor Deposition: Role of the Alumina Crucible

Stand, Neileth; Mendoza, Cesar D.; Freire, F.L.

doi:10.3390/cryst12060835

Cited by 8 publications

(3 citation statements)

References 41 publications

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“…The PL spectrum, acquired through excitation with a wavelength of 532 nm, is presented in Figure b. It demonstrated confinement of the PL peak within the range of wavelengths from 550 to 750 nm, which aligns with typical characteristics exhibited by monolayer WS 2 crystals. − The identified maximum peak at approximately 636 nm (corresponding to a direct band gap ∼ 1.95 eV) lies within previously reported ranges for photoluminescent values associated with monolayer WS 2 films. To evaluate its uniformity, we present Raman and PL mappings depicting the synthesized intensity distribution across an area measuring 5 × 5 μm for the monolayer WS 2 film (Figure c,d).…”

Section: Resultssupporting

confidence: 79%

Synthesis of Centimeter-Sized Continuous Monolayer Tungsten Disulfide Films Using the Expansion Growth Space Atmospheric Pressure Chemical Vapor Deposition Method

Liu,

Li,

et al. 2023

J. Phys. Chem. C

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Monolayer tungsten disulfide (WS2) exhibits stable physical properties and remarkable photoelectric characteristics, rendering it a highly favored choice for the fabrication of photoelectric devices. However, the preparation of large-area monolayer WS2 remains challenging. In this study, we propose an atmospheric pressure chemical vapor deposition (APCVD) method to grow large-area monolayer WS2 films. By increasing the chamber space, we achieved a slow and even discharge of air flow during atmospheric growth, resulting in a relatively uniform concentration in the reaction zone. The large-area monolayer WS2 films (∼cm) can be obtained by regulating the growth temperature and gas flow rate. We reduce the evaporation temperature of WO3 by adding KI. Different concentrations of hydrogen (H2) were used for comparison: too low rate would led to grow a small sample due to insufficient catalysis; however, too high rate caused H2 etching on the sample surface. Finally, we prepared monolayer WS2 films by controlling the temperature and flow rate of the carrier gas. Our APCVD equipment and method are simple, efficient, and inexpensive.

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Section: Resultssupporting

confidence: 79%

Synthesis of Centimeter-Sized Continuous Monolayer Tungsten Disulfide Films Using the Expansion Growth Space Atmospheric Pressure Chemical Vapor Deposition Method

Liu,

Li,

et al. 2023

J. Phys. Chem. C

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“…This method resulted in continuous monolayer WS 2 film having millimetersized grains on the sapphire substrate (2 inches). Further, a fascinating report from Stand et al [103] describes the role of the alumina crucible for WS 2 growth on SiO 2 substrate. This report demonstrates that the number of growth cycles affects the synthesis and properties of WS 2 grown by APCVD.…”

Section: Transition Metal Dichalcogenidesmentioning

confidence: 99%

Chemical vapor deposition: a potential tool for wafer scale growth of two-dimensional layered materials

Hammoumi

Chaudhary

Neugebauer

et al. 2022

J. Phys. D: Appl. Phys.

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The rapidly growing demand for high-performance and low-power electronic and photonic devices has driven attention towards novel two-dimensional (2D) layered materials. In this regard, 2D layered materials, including graphene, molybdenum disulfide (MoS2), and newly discovered phosphorene, have the potential to take over the existing semiconductor industry due to their intriguing features, such as excellent electrical conductivity, strong light–matter interaction, and especially the ability to scale down the resulting device to the atomic level. However, to explore the full potential of these materials in various technological applications, it is essential to develop a large-scale synthesis method that can provide uniform, defect-free thin film. The chemical vapor deposition (CVD) technique has been proven to produce large-scale and less defective 2D crystals with reasonably good quality and uniformity compared to other elaboration techniques, such as molecular beam epitaxy. This article discusses whether CVD may improve 2D layered materials growth, including graphene and MoS2, and whether it can be used to grow phosphorene. Only a few attempts have been made using CVD-like methods to grow phosphorene directly on the substrate. Still, one has to go long to establish a proper CVD method for phosphorene synthesis.

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“…CVD allows easy thickness modulation, scalability, and clean interface formation during synthesis, mitigating contamination issues. As a result, CVD has become the primary method for synthesizing TMD-based vdWHs [14][15][16][17]. Various vertical heterostructures, such as WS 2 /MoS 2 , directly synthesized via CVD, have been reported [18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Tailored Synthesis of Heterogenous 2D TMDs and Their Spectroscopic Characterization

Nam,

Lee,

Lee

et al. 2024

Nanomaterials

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Two-dimensional (2D) vertical van der Waals heterostructures (vdWHs) show great potential across various applications. However, synthesizing large-scale structures poses challenges owing to the intricate growth parameters, forming unexpected hybrid film structures. Thus, precision in synthesis and thorough structural analysis are essential aspects. In this study, we successfully synthesized large-scale structured 2D transition metal dichalcogenides (TMDs) via chemical vapor deposition using metal oxide (WO3 and MoO3) thin films and a diluted H2S precursor, individual MoS2, WS2 films and various MoS2/WS2 hybrid films (Type I: MoxW1−xS2 alloy; Type II: MoS2/WS2 vdWH; Type III: MoS2 dots/WS2). Structural analyses, including optical microscopy, Raman spectroscopy, transmission electron microscopy (TEM) with energy-dispersive X-ray spectroscopy, and cross-sectional imaging revealed that the A1g and E2g modes of WS2 and MoS2 were sensitive to structural variations, enabling hybrid structure differentiation. Type II showed minimal changes in the MoS2′s A1g mode, while Types I and III exhibited a ~2.8 cm−1 blue shift. Furthermore, the A1g mode of WS2 in Type I displayed a 1.4 cm−1 red shift. These variations agreed with the TEM-observed microstructural features, demonstrating strain effects on the MoS2–WS2 interfaces. Our study provides insights into the structural features of diverse hybrid TMD materials, facilitating their differentiation through Raman spectroscopy.

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Synthesis of WS2 by Chemical Vapor Deposition: Role of the Alumina Crucible

Cited by 8 publications

References 41 publications

Synthesis of Centimeter-Sized Continuous Monolayer Tungsten Disulfide Films Using the Expansion Growth Space Atmospheric Pressure Chemical Vapor Deposition Method

Synthesis of Centimeter-Sized Continuous Monolayer Tungsten Disulfide Films Using the Expansion Growth Space Atmospheric Pressure Chemical Vapor Deposition Method

Chemical vapor deposition: a potential tool for wafer scale growth of two-dimensional layered materials

Tailored Synthesis of Heterogenous 2D TMDs and Their Spectroscopic Characterization

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