Synthesis of vertically electric-field-aligned In2O3 nanowires

Li, S.Q.; Liang, Y. X.; Guo, T.L.; Lin, Zhichen; Wang, T.H.

doi:10.1016/j.matlet.2005.11.094

Cited by 9 publications

(5 citation statements)

References 11 publications

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“…This pressure was typical of that used in our growth experiments. Only 7.5 mm below this position (the exposed probe tip was 3 mm in length) the electron density dropped to 0.32 Â 10 11 electrons/cm 3 or approximately one twentieth of the value found closer to the cathode face. Assuming a Maxwellian plasma, our electron density should drop exponentially from the face of the plasma source due to gas collision.…”

Section: A Plasma Source and Grid Considerationsmentioning

confidence: 74%

“…Much more gallium is evident in the films with increasingly negative applied grid voltage. These results are still being interpreted and will be presented in more detail at a later date, but it is clear at this point that a graph comparative to Figures 6 and 8 needs further interpretation for case (3).…”

Section: Case (3) Grid C In Placementioning

confidence: 92%

“…However, other aspects of electrostatics during film growth are largely unreported. Li et al 3 mentioned the alignment of In 2 O 3 nanopillars in the electric field of a plasma environment. Others have noted the alignment of carbon nanotubes in the electric fields created by plasmas.…”

Section: Introductionmentioning

confidence: 99%

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DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects

Butcher

Terziyska

Gergova

et al. 2017

Journal of Applied Physics

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It is shown that attractive electrostatic interactions between regions of positive charge in RF plasmas and the negative charge of metal wetting layers, present during compound semiconductor film growth, can have a greater influence than substrate temperature on film morphology. Using GaN and InN film growth as examples, the DC field component of a remote RF plasma is demonstrated to electrostatically affect metal wetting layers to the point of actually determining the mode of film growth. Examples of enhanced self-seeded nanopillar growth are provided in the case where the substrate is directly exposed to the DC field generated by the plasma. In another case, we show that electrostatic shielding of the DC field from the substrate can result in the growth of Ga-face GaN layers from gallium metal wetting layers at 490 C with root-mean-square roughness values as low as 0.6 nm. This study has been carried out using a migration enhanced deposition technique with pulsed delivery of the metal precursor allowing the identification of metal wetting layers versus metal droplets as a function of the quantity of metal source delivered per cycle. It is also shown that electrostatic interactions with the plasma can affect metal rich growth limits, causing metal droplet formation for lower metal flux than would otherwise occur. Accordingly, film growth rates can be increased when shielding the substrate from the positive charge region of the plasma. For the example shown here, growth rates were more than doubled using a shielding grid.

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Section: A Plasma Source and Grid Considerationsmentioning

confidence: 74%

Section: Case (3) Grid C In Placementioning

confidence: 92%

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DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects

Butcher

Terziyska

Gergova

et al. 2017

Journal of Applied Physics

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“…In particular, nanocolumns were observed to grow in the electric field generated by the plasma without the grid, but these were absent when the substrate was shielded by the grounded grid. There are a few other publications in which it has been observed that nanostructures align in electric fields during plasma growth [6][7][8], including some work on graphene [9,10]. Interestingly, subsequent to our own work [5], Qi et al [10] used a Faraday cage to similarly shield their plasma-grown graphene from electric fields so that it would grow in a horizontal plane rather than the vertical plane induced by the fields.…”

Section: Introductionmentioning

confidence: 94%

Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction

Butcher

Georgiev²,

Georgieva³

et al. 2022

Coatings

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Strong electric fields are generated by radio frequency (RF) plasma sources, and though the RF portion is too high a frequency for ions to react, the direct current (DC) portion of these fields has been shown to cause the atomic migration of metals, which can influence film morphology even downstream of the plasma where ionized plasma species are absent. In particular, we have observed the growth of nanopillars due to metal atoms migrating toward the positive field of the remote plasma. A biased grid placed between the plasma and the substrate can shield the substrate from these fields so that, when grounded, smooth films can be grown to a root mean square roughness of less than 1 nm. Positively biasing the grid returns the growth of nanocolumns. Interestingly, negatively biasing the grid significantly reduced the carbon and hydrocarbon content of gallium nitride films grown at a low temperature (~660 °C) using a nitrogen plasma, as observed using secondary ion mass spectroscopy (SIMS) and optical absorption measurements. The films also showed a notable improvement in conductivity and visible appearance.

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“…Field-added lateral MIC of silicon has been reported to give rise to aligned nanostructures [76]. Electric field–induced growth of vertical indium oxide nanowires also has been reported [77] (Fig. 8).…”

Section: Guided Self-assemblymentioning

confidence: 99%

Directed Self-Assembly: Expectations and Achievements

Kumar

2010

Nanoscale Res Lett

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Nanotechnology has been a revolutionary thrust in recent years of development of science and technology for its broad appeal for employing a novel idea for relevant technological applications in particular and for mass-scale production and marketing as common man commodity in general. An interesting aspect of this emergent technology is that it involves scientific research community and relevant industries alike. Top–down and bottom–up approaches are two broad division of production of nanoscale materials in general. However, both the approaches have their own limits as far as large-scale production and cost involved are concerned. Therefore, novel new techniques are desired to be developed to optimize production and cost. Directed self-assembly seems to be a promising technique in this regard; which can work as a bridge between the top–down and bottom–up approaches. This article reviews how directed self-assembly as a technique has grown up and outlines its future prospects.

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Synthesis of vertically electric-field-aligned In2O3 nanowires

Cited by 9 publications

References 11 publications

DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects

DC voltage fields generated by RF plasmas and their influence on film growth morphology through static attraction to metal wetting layers: Beyond ion bombardment effects

Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction

Directed Self-Assembly: Expectations and Achievements

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