Synthesis of transparent and thermally stable polyimide-aramid nanocomposites – Prospective materials for high-temperature electronic manufacture applications

Kovalev, Mikhail K.; Kalinina, F. E.; Androsov, D. A.; Cho, Chungkun

doi:10.1016/j.polymer.2012.11.051

Cited by 21 publications

(6 citation statements)

References 20 publications

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“…In this report, we introduce a simple, efficient, and universal surface planarization method involving rough flexible substrates for paper electronics, followed by a successful demonstration of highly stable OFETs on paper substrates. As a paper substrate, we employed aramids (polyamides) because of their superior mechanical (high tenacity and modulus of elasticity) and temperature (high temperature resistance and no heat shrinkage) properties . In order to reduce the surface roughness of aramid substrates from several tens of micrometers to a sub‐nanometer level, we introduce a novel surface smoothening method inspired by nanoimprint lithography technology.…”

Section: General Electrical Performance and Extracted Parameters Frommentioning

confidence: 99%

Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method

Shin

Roh

Song³

et al. 2019

Adv Materials Inter

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In this work, operationally and mechanically stable organic field‐effect transistors (OFETs) are demonstrated on aramid fiber‐based paper enabled by a simple and universal surface planarization method. By employing a nanoimprint lithography‐inspired surface smoothening method, rough aramid paper is successfully smoothened from a scale of several tens of micrometers to a sub‐nanometer‐scale surface roughness. Owing to the sub‐nanometer‐scale surface roughness of the aramid paper, the OFETs fabricated on the aramid paper exhibit decent field‐effect mobility (0.25 cm2 V−1 s−1) with a high current on‐to‐off ratio (>107), both of which are comparable with those of OFETs fabricated on rigid silicon substrates. Moreover, the OFETs fabricated on the aramid paper exhibit both high operational and mechanical stability; this is indicated by a bias‐stress‐induced threshold voltage shift (∆VTH ≈ 4.27 V under an excessive gate bias stress of 1.7 MV cm−1 for 1 h 30 min) comparable to that of OFETs on a rigid silicon substrate, moderate field‐effect mobility, and a threshold voltage stability under 1000 bending cycles with a compressive strain of 1%. The demonstration of highly stable OFETs on paper enabled by the simple planarization method will expand the potential use of various types of paper in electronic applications.

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Section: General Electrical Performance and Extracted Parameters Frommentioning

confidence: 99%

Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method

Shin

Roh

Song³

et al. 2019

Adv Materials Inter

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“…The processing temperature is another major property in the electronics industry that should be considered carefully. Generally, the process temperature is limited below 300 °C when considering the thermal expansion and thermal stability of other materials . Therefore, the glass transition temperature of polyimide should be reduced to below 300 °C to improve the workability and reliability of the resultant product.…”

Section: Introductionmentioning

confidence: 99%

“…Generally, the process temperature is limited below 300 °C when considering the thermal expansion and thermal stability of other materials. [ 8 ] Therefore, the glass transition temperature of polyimide should be reduced to below 300 °C to improve the workability and reliability of the resultant product. In order to change the glass transition temperature of the polymer, many studies have been conducted, including those that have investigated fl exible structures and crosslinking.…”

Section: Introductionmentioning

confidence: 99%

The Effects of Amide Groups on the Thermal and Optical Properties of Poly(amide‐imide)s with Low Residual Stress for Microelectronic Devices

Kim

Yoo

et al. 2016

Macro Chemistry & Physics

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In this study, poly(amide-imide)s are synthesized for electronic materials by adding amide groups into polyimide. As it is expected, poly(amide-imide) shows an amorphous structure with a lower glass transition temperature and residual stress than the neat polyimide due to the high steric hindrance of the amide group. Also, the modifi cation to the polyimide structure leads to higher transmittance and enhances colorless properties. Consequently, successful synthesis of poly(amide-imide) s is demonstrated which has wide applicability in the electronic industries due to their low glass transition temperature. It is expected that semiconductor and integrated circuit products can be manufactured utilizing poly(amide-imide)s with high reliability and a low chance of cracking due to their lower residual stress. Furthermore, it envisioned that the improved optical properties of poly(amide-imide) materials will allow for their applications in transparent displays and coating products.

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“…[1][2][3] To achieve such usage, excellent thermal properties, such as high glass transition temperature, low residual stress and low coefficient of thermal expansion (CTE), are required with excellent mechanical properties. 4 Polyimide (PI) has been recognized as a material for such industries because of its outstanding thermal stability at elevated temperatures.…”

Section: Introductionmentioning

confidence: 99%

Norbornene end-capped polyimide for low CTE and low residual stress with changes in the diamine linkages

et al. 2015

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The effects of norbornene (NE) crosslinking and diamine bridge linkages (ether, sulfone, and trifluoromethyl) on polyimide films were investigated. The purpose of this study was to study the behavior of the NE endcapped polyimide with different diamine bridge linkage structure at elevated temperatures on residual stress and modulus change. 5-Norbornene-2,3-dicarboxylic acid was introduced as the end-capping agent in order to increase the ratio of crosslinking in the structure through reverse Diels-Alder reaction. Wide angle X-ray diffraction (WAXD) was measured to study the relation of d-spacing and structure change of the bridge linkage of polymers through NE crosslinking. Coefficient of thermal expansion (CTE) and residual stress were measured to confirm the loaded stress between the substrate and polymer film through a thin film stress analyzer (TFSA). Storage (ε') and loss modulus (ε'') were studied at elevated temperatures to study the relation of bridge linkage mobility of the polyimide at elevated temperature.

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Synthesis of transparent and thermally stable polyimide-aramid nanocomposites – Prospective materials for high-temperature electronic manufacture applications

Cited by 21 publications

References 20 publications

Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method

Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method

The Effects of Amide Groups on the Thermal and Optical Properties of Poly(amide‐imide)s with Low Residual Stress for Microelectronic Devices

Norbornene end-capped polyimide for low CTE and low residual stress with changes in the diamine linkages

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