Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Li, Liuan; Nakamura, Ryosuke; Wang, Qingpeng; Jiang, Ying; Ao, Jin‐Ping

doi:10.1186/1556-276x-9-590

Cited by 16 publications

(14 citation statements)

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“…The AlGaN/GaN HEMTs with TiN-based gate have been demonstrated by other groups. [11][12][13][14][15] However, these works mainly focused on the improvement of device characteristics such as current collapse, 14 thermal stability, [11][12][13]15 and high voltage stress effect. 15 Recently, we have also reported an improved Schottky barrier height (SBH) of $1.1 eV in AlGaN/GaN HEMTs with sputtered TiN as the gate electrode.…”

Section: Introductionmentioning

confidence: 99%

“…For example, Schottky (SC) emission was realized in n-type Ge substrates with Pt 18 and Se 19 Schottky contacts, and Poole-Frenkel (PF) emission was widely adopted for the III-nitrides (GaN, 20 AlGaN/ GaN, [20][21][22] and AlInN/GaN 22,23 ) with Ni-based Schottky contacts by electron beam (e-beam) evaporation. However, TiN gate was commonly deposited by the sputtering process, [11][12][13][14][15][16][17] which may lead to plasma damages to the surface of the AlGaN/GaN HEMT structure. Hence, it is important to study and understand the gate leakage current mechanism of AlGaN/ GaN SBDs and HEMTs with sputtered TiN.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Arulkumaran

et al. 2017

Journal of Applied Physics

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The gate leakage current mechanism of AlGaN/GaN Schottky barrier diodes (SBDs) and highelectron-mobility transistors (HEMTs) with sputtered TiN is systematically investigated. The reverse leakage current (J R ) of TiN SBDs increases exponentially with the increase of reverse voltage (V R ) from 0 to À3.2 V (Reg. I). This conduction behavior is dominated by Poole-Frenkel emission from TiN through an interface state of 0.53 eV to the conductive dislocation-related continuum states. The obtained interface state of 0.53 eV may be due to the plasma damage to the surface of the AlGaN/GaN HEMT structure during the TiN sputtering. When the TiN SBDs are biased with À20 < V R < À3.2 V, J R saturated due to the depletion of the 2-dimensional electron gas (2DEG) channel (Reg. II). This conduction behavior is dominated by the trap-assisted tunneling through the interface state at $0.115 eV above the Fermi level. The three terminal OFF-state gate leakage current of AlGaN/GaN HEMTs exhibited an activation energy of 0.159 eV, which is in close agreement with the obtained interface state of $0.115 eV from saturated J R (Reg. II) of the SBDs. The observation of the negative temperature coefficient (À1.75 V/K) from the OFF-state breakdown voltage (at 1 lA/mm) of AlGaN/GaN HEMTs is due to the trap-assisted tunneling mechanism, which is also well correlated with the conduction mechanism realized from the reverse leakage current of the SBDs.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Arulkumaran

et al. 2017

Journal of Applied Physics

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“…However, the work temperature is only tested to 200 °C. In our previous work, we have confirmed that TiN/GaN Schottky contact presented good rectification characteristics after 850 °C annealing for 10 minutes [29][30][31]. Therefore, we believe that the TiN anode GaN SBD has the potential to sense higher temperatures (T>600 K).…”

mentioning

confidence: 63%

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

et al. 2021

IEICE Electron. Express

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To realize the in-situ temperature monitoring of power device, three kinds of Schottky barrier diodes (SBDs) are designed to reveal the effect of geometry on the temperature sensitivity. The current-voltage characteristics at different temperature demonstrate that all the circular-, finger-, and 8-finger-SBDs show good rectification. The forward voltage at a specific sub-threshold current level presents good linearity versus temperature. In addition, the deduced sensitivity presents no dependency on the geometry but is determined by the ideality factor and current density. The sensing mechanism of SBD sensor is explained by the thermionic emission model. Those results are beneficial to the design and fabrication of temperature sensor.

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“…These latter (TaN and TiN) exhibited some interesting features, such as a low leakage current combined with a good thermal stability [23,24]. The electrical properties of these systems are strongly influenced by the deposition technique, as their work function can vary in wide range (i.e., 4.13 -5.05 eV for TaN [26] and 3.8 -4.6 eV for TiN) [27,28,29].…”

Section: Introductionmentioning

confidence: 99%

Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures

Greco

Franco

Bongiorno

et al. 2020

Semicond. Sci. Technol.

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Tungsten carbide (WC) contacts have been investigated as a novel gold-free Schottky metallization for AlGaN/GaN heterostructures. The evolution of the electrical and structural/compositional properties of the WC/AlGaN contact has been monitored as a function of the annealing temperature in the range from 400 to 800°C. The Schottky barrier height (ΦB) at WC/AlGaN interface, extracted from the forward current-voltage characteristics of the diode, decreased from ∼0.8 eV in the asdeposited and 400°C annealed sample, to 0.56 eV after annealing at 800 °C. This large reduction of ΦB was accompanied by a corresponding increase of the reverse bias leakage current. Transmission electron microscopy coupled to electron energy loss spectroscopy analyses revealed the presence of oxygen (O) uniformly distributed in the WC layer, both in the as-deposited and 400°C annealed sample. Conversely, oxygen accumulation in a 2-3 nm thin W-O-C layer at the interface with AlGaN was observed after the annealing at 800 °C, as well as the formation of W2C grains within the film (confirmed by X-ray diffraction analyses). The formation of this interfacial W-O-C layer is plausibly the main origin of the decreased ΦB and the increased leakage current in the 800°C annealed Schottky diode, whereas the decreased O content inside the WC film can explain the reduced resistivity of the metal layer. The results provide an assessment of the processing conditions for the application of WC as Schottky contact for AlGaN/GaN heterostructures.

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Synthesis of titanium nitride for self-aligned gate AlGaN/GaN heterostructure field-effect transistors

Cited by 16 publications

References 16 publications

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Investigation of gate leakage current mechanism in AlGaN/GaN high-electron-mobility transistors with sputtered TiN

Effect of geometry on the sensing mechanism of GaN Schottky barrier diode temperature sensor

Thermal annealing effect on electrical and structural properties of Tungsten Carbide Schottky contacts on AlGaN/GaN heterostructures

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