2005
DOI: 10.1016/j.matlet.2005.02.077
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Synthesis of Ti3SiC2/TiC composites from TiH2/SiC/TiC powders

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Cited by 37 publications
(25 citation statements)
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“…While hot-pressing has remained an important method for bulk synthesis [203,204,205,206,207,208] for research purposes, pressureless sintering [209,210,211,212,213,214,215] may be more commercially viable. Other methods for processing of bulk MAX phases are variations of self-propagating high-temperature synthesis [216,217,218,219,220], spark plasma sintering [221,222,223,224,225] or pulse discharge sintering [226,227,228,229,230,231], and solidliquid reaction synthesis [232,233,234]. Recent innovative approaches to bulk synthesis include three-dimensional printing [235], the use of Al or Sn, respectively, as catalysts for growth of 38 Ti 3 SiC 2 and Ti 3 AlC 2 [210,236,237], and design of crystalline precursors for solid phase reaction synthesis [238].…”
Section: Bulk Synthesis Methodsmentioning
confidence: 99%
“…While hot-pressing has remained an important method for bulk synthesis [203,204,205,206,207,208] for research purposes, pressureless sintering [209,210,211,212,213,214,215] may be more commercially viable. Other methods for processing of bulk MAX phases are variations of self-propagating high-temperature synthesis [216,217,218,219,220], spark plasma sintering [221,222,223,224,225] or pulse discharge sintering [226,227,228,229,230,231], and solidliquid reaction synthesis [232,233,234]. Recent innovative approaches to bulk synthesis include three-dimensional printing [235], the use of Al or Sn, respectively, as catalysts for growth of 38 Ti 3 SiC 2 and Ti 3 AlC 2 [210,236,237], and design of crystalline precursors for solid phase reaction synthesis [238].…”
Section: Bulk Synthesis Methodsmentioning
confidence: 99%
“…Наконец, в работах [24,26,28,29,42] показана принципиальная воз-можность упрочнения спеченного титанокремнистого карбида Ti 3 SiC 2 в низко-и высокопористом состояниях путем естественного введения частиц второй фазы TiC (образование in-situ композитов Ti 3 SiC 2 /TiC).…”
Section: обоснование возможности решения проблемы высокотемпера-турныunclassified
“…The formation of ternary titanium carbides Ti 3 SiC 2 and Ti 3 AlC 2 involves an intermediate phase, binary titanium carbide TiC, and the formation of ternary titanium nitride Ti 4 AlN 3 involves binary titanium nitride TiN [9][10][11]. It is shown in [12] that reaction sintering of a powder mixture consisting of TiH 2 + TiC (1) + SiC at 1300°C and 50 MPa can involve the formation of secondary titanium carbide TiC (2) . Its content in the product can be controlled by varying the amounts of ingredients in the charge and regulating the completeness of the reaction through sintering conditions.…”
Section: Introductionmentioning
confidence: 99%