2001
DOI: 10.1016/s0022-0248(01)01360-4
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Synthesis of thin Si whiskers (nanowires) using SiCl4

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Cited by 70 publications
(35 citation statements)
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“…The nanowire diameter has been shown to depend on the size of the catalyst droplet [17] as well as reaction parameters such as temperature and precursor pressure [18,19]. Crystalline nanowires of a variety of relevant semiconductors such as Si, Ge, GaAs, CdS and CdSe with diameters down to a few nanometres and lengths greater than 75 μm have been produced [16][17][18][19][20][21][22][23][24][25][26][27]. Figure 5 (a) displays a disordered array of Si NWs formed by VLS growth on a silicon substrate [26].…”
Section: Vapor-liquid-solid Techniquesmentioning
confidence: 99%
“…The nanowire diameter has been shown to depend on the size of the catalyst droplet [17] as well as reaction parameters such as temperature and precursor pressure [18,19]. Crystalline nanowires of a variety of relevant semiconductors such as Si, Ge, GaAs, CdS and CdSe with diameters down to a few nanometres and lengths greater than 75 μm have been produced [16][17][18][19][20][21][22][23][24][25][26][27]. Figure 5 (a) displays a disordered array of Si NWs formed by VLS growth on a silicon substrate [26].…”
Section: Vapor-liquid-solid Techniquesmentioning
confidence: 99%
“…These methods include wet chemical method, electrochemical method, vapour-liquid-solid method, physical and chemical vapour deposition, dc and ac sputtering [25][26][27][28][29][30][31]. Each method has its advantages and certain limitations.…”
Section: Growth Methodologies and Morphologymentioning
confidence: 99%
“…Wagner & Ellis (Wagner & Ellis, 1964) first reported this mechanism in the 1960s to produce micrometer-sized wires, later justified thermodynamically and kinetically by Givargizov in 1975(Givargizov, 1975. In the early twenty-first century, this mechanism is extensively explored by several research groups worldwide to prepare nanowires and NRs from a rich variety of inorganic materials (Wu & Yang, 2000;Zhang et al, 2001;Wu & Yang, 2001;Gudiksen & Lieber, 2000;Wu et al, 2002b;Duan & Lieber, 2000;Pan et al, 2001;Gao et al, 2003;Chen et al, 2001;Wang et al, 2002b). The VLS growth mechanism is practically demonstrated by Yang group (Wu & Yang, 2001) with the help of in-situ transmission electron microscopy (TEM) techniques by monitoring the VLS growth mechanism in real time.…”
Section: Vapor-liquid-solid Growth Methodsmentioning
confidence: 99%