Synthesis of the Sn-based CaSnS3 chalcogenide perovskite thin film as a highly stable photoabsorber for optoelectronic applications

Chalcogenide Perovskites and Perovskite-Based Chalcohalide as Photoabsorbers: A Study of Their Properties, and Potential Photovoltaic Applications

“…As a possible lead-free and steady photoabsorber, the BaZrS 3 compound has recently withdrawn significant attention [40]. The BaZrS 3 combination is associated with perovskite mode sulfides, which establish d 0 diamagnetic semiconductors composed of hafnium complexes, demonstrating typically orange-brown to green colour [41].…”

“…While the BaZrS3 phase's peak width remained the same at 1000 °C, various peaks occurred in correspondence to different oxide and sulfide stages, suggesting extensive film degradation. On this basis, for further research, an- The synthesis of the BaZrS 3 compound was also carried out in the thin layer with strong light absorption and elevated ambient air equilibrium [40]. Gupta et al synthesized BaZrS 3 by sulfurizing a thin film of BaZrO 3 , which yielded polycrystalline with an approximately 1.75 eV bandgap.…”

“…Besides, with only a few fractures remaining, a significant decrease in fractures was located, showing a substantial improvement in the quality of thin films. The thicknesses of the film were calculated as cross-section images at 500-520 nm, respectively, in Figure 11e-f [40].…”

“…The primary challenge of rapid oxidation from divalent Sn 2+ into more stable Sn 4+ is usually faced by Sn-based perovskites [56][57][58][59][60][61][62][63][64]. Shaili et al ensured that the same analysis was conducted six months after fabrication, demonstrating virtually no adjustment and excellent atmospheric stability [40]. As a result, more experiments carried out on CaSnS 3 should be encouraged.…”

Unraveling the microstructural and optoelectronic properties of solution-processed Pr-doped SrSnO3 perovskite oxide thin films

“…The two solutions were mixed under vigorous magnetic stirring at 70 C for 2 h, resulting in very clear solutions. The solutions were transferred to the deposition chamber equipped with the ultrasonic spray set-up (SONAER Ultrasonics) set at a frequency of 130 kHz and an applied power of 2.8 W. [20][21][22] The selected substrates were the silicon wafer Si (100) with the dimensions of 1-1.5 cm. The substrates were ultrasonically cleaned with distilled water, ethanol and acetone consecutively for 15 min and nally dried in an air stream.…”