Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

Gu, Peiyang; Gao, Junkuo; Lu, Chengrong; Chen, Wangqiao; Wang, Chengyuan; Li, Gang; Zhou, Feng; Xu, Qingfeng; Lu, Jianmei; Zhang, Qichun

doi:10.1039/c4mh00022f

Cited by 65 publications

(43 citation statements)

References 72 publications

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“…This LiF layer could act as ab locking layer to prohibit penetration of an Al filament. [38,39] The electrical transition in the ITO/ NIT n CzNO 2 (n = 0, 1, 2)/LiF/Al structured memory devices (see the Supporting Information, Figure S6) was similar to that shown in Figure 5. As ar esult, the switching behavior was intrinsic to the organic small molecules, rather than to the conductive metal filaments.…”

Section: Resistive-switching Mechanismsupporting

confidence: 56%

“…[37b, 40] When ah igher voltage was applied, the deeper traps would be subsequently filled as well, thereby forming a" trap-free" environment with higher conductivity. [39,40] Therefore, two switching transitions were observed in these memory devices.…”

Section: Resistive-switching Mechanismmentioning

confidence: 98%

“…As ar esult, the switching behavior was intrinsic to the organic small molecules, rather than to the conductive metal filaments. [39] We recently proposedac hargetrapping mechanism to explain the multilevel conductance switching, which hadb een supported by observations on as eries of multilevel memory devices.…”

Section: Resistive-switching Mechanismmentioning

confidence: 99%

“…[4c, 39,40] Previously,t he charge-trapping mechanism was applied to inorganic insulators, for which the band-structure charge-transport theory worked. [41] In contrast, small organic molecules often crystallize through weak intermolecular interactions, thereby leading to highly localized states.…”

Section: Resistive-switching Mechanismmentioning

confidence: 99%

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Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge‐Trapping in Organic Materials

et al. 2016

Chemistry An Asian Journal

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The practical application of organic memory devices requires low power consumption and reliable device quality. Herein, we report that inserting thienyl units into D-π-A molecules can improve these parameters by tuning the texture of the film. Theoretical calculations revealed that introducing thienyl π bridges increased the planarity of the molecular backbone and extended the D-A conjugation. Thus, molecules with more thienyl spacers showed improved stacking and orientation in the film state relative to the substrates. The corresponding sandwiched memory devices showed enhanced ternary memory behavior, with lower threshold voltages and better repeatability. The conductive switching and variation in the performance of the memory devices were interpreted by using an extended-charge-trapping mechanism. Our study suggests that judicious molecular engineering can facilitate control of the orientation of the crystallite in the solid state to achieve superior multilevel memory performance.

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Section: Resistive-switching Mechanismsupporting

confidence: 56%

Section: Resistive-switching Mechanismmentioning

confidence: 98%

Section: Resistive-switching Mechanismmentioning

confidence: 99%

Section: Resistive-switching Mechanismmentioning

confidence: 99%

See 2 more Smart Citations

Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge‐Trapping in Organic Materials

et al. 2016

Chemistry An Asian Journal

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“…65,66 The memory devices based on compounds 15 and 16 were fabricated by same method as described for compounds 1-8. 65,66 The memory devices based on compounds 15 and 16 were fabricated by same method as described for compounds 1-8.…”

Section: -63mentioning

confidence: 99%

Recent progress in organic resistance memory with small molecules and inorganic–organic hybrid polymers as active elements

Wang

et al. 2015

J. Mater. Chem. C

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155

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The organic resistance memory has attracted a lot of attentions due to its high scalability, flexibility, easy processing, low fabrication cost, etc. Organic small molecules, which own well-defined structures and more accurate experimentsimulation matching, have been widely explored as the active materials for the application in organic resistance memory. In addition, inorganic-organic hybrid polymers have been expected to have charming resistive switching properties because they can potentially combine the advantages of both inorganic materials and organic polymers. This review presents the recent progress of organic resistance memory based on several families of organic small molecules and some typical inorganic-organic hybrid polymers, and the discussion on their structure-property relationships. 53,54 Since then, great progresses have been achieved. The welldefined structures of organic small molecules make them have good batch-to-batch reproducing ability in processing. In addition, the more accurate experiment-simulation matching of organic small molecules is favour for better understanding

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Rational Design of Small Molecules to Implement Organic Quaternary Memory Devices

Zhang

Zhuang

et al. 2015

Adv Funct Materials

112

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Organic small‐molecule‐based devices with multilevel electroresistive memory behaviors have attracted more and more attentions due to their super‐high data‐storage density. However, up to now, only ternary memory molecules have been reported, and ternary storage devices may not be compatible with the binary computing systems perfectly. In this work, a donor–acceptor structured molecule containing three electron acceptors is rationally designed and the field‐induced charge‐transfer processes can occur from the donors. Organic quaternary memory devices based on this molecule are successfully demonstrated for the first time. The switching threshold voltages of the memory device are –2.04, –2.73, and –3.96 V, and the current ratio of the “0,” “1,” “2,” and “3” states is 1:101.78:103.47:105.36, which indicate a low possibility of read and write errors. The results represent a further step in organic high‐density data‐storage devices and will inspire the further study in this field.

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Synthesis of tetranitro-oxacalix[4]arene with oligoheteroacene groups and its nonvolatile ternary memory performance

Abstract: Memory devices based on 4N4OPz exhibit excellent ternary memory behavior with high ON2/ON1/OFF current ratios and low switching threshold voltage.

Cited by 65 publications

References 72 publications

Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge‐Trapping in Organic Materials

Inserting Thienyl Linkers into Conjugated Molecules for Efficient Multilevel Electronic Memory: A New Understanding of Charge‐Trapping in Organic Materials

Recent progress in organic resistance memory with small molecules and inorganic–organic hybrid polymers as active elements

Rational Design of Small Molecules to Implement Organic Quaternary Memory Devices

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