Synthesis of ternary and quaternary CuInxGa1−xSe2 (0≤x≤1) semiconductor nanocrystals

Wang, Yu‐Hsiang A.; Pan, Changqing; Bao, Ningzhong; Gupta, Arunava

doi:10.1016/j.solidstatesciences.2009.07.005

Cited by 22 publications

(24 citation statements)

References 33 publications

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“…Additionally, the data of 2-theta at the peak of (112) increases with the doping amount of Ga 2 Se 3 . This is consistent with the result reported by other several works [14][15][16][17].…”

Section: Compositionssupporting

confidence: 94%

“…For fixed Cu content, the Ga/(In + Ga) ratio and the 2-theta at (112)-peak of each sintered sample corresponding to various Ga 2 Se 3 doping ratios are shown in Figure 5. Furthermore, the main XRD peaks (112) shown in Figure 3 display a noticeable shift that the higher the angle, the larger the doping ratio of Ga 2 Se 3 , which has also been reported elsewhere [14][15][16][17]. This is attributed to relatively small Ga atoms substituting for larger In atoms in the chalcopyrite structure [17], resulting in a decrease in the lattice parameter.…”

Section: Compositionssupporting

confidence: 71%

See 1 more Smart Citation

The Effect of Doping Ratios on Structure, Composition, and Electrical Properties of Absorber Formed by Thermal Sintering

Liu

Chang

Chuang

2013

International Journal of Photoenergy

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Chalcopyrite compounds of copper indium gallium diselenide (CIGS) absorber were fabricated by using binary-particle (Cu 2 Se, In 2 Se 3 , and Ga 2 Se 3 ) precursors with thermal sintering method. The binary-particle ink was firstly prepared by milling technology and then printed onto a soda lime glass substrate, which was baked at a low temperature to remove solvents and form a dry precursor. Following milling, the average particle size of agglomerated CIGS powder is smaller than 1.1 m. Crystallographic, stoichiometric, and electrical properties of precursor CIGS films with various doping amounts of Ga 2 Se 3 had been widely investigated by using thermal sintering in a nonvacuum environment without selenization. Analytical results reveal that the CIGS absorption layer prepared with a Ga 2 Se 3 doping ratio of 3 has a chalcopyrite structure and favorable composition. The mole ratio of Cu : In : Ga : Se of this sample was 1.03 : 0.49 : 0.54 : 1.94, and related ratios of Ga/(In + Ga) and Cu/(In + Ga) were 0.52 and 0.99, respectively. The resistivity and carrier concentration were 3.77 ohm-cm and 1.15 E + 18 cm −3 .

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“…Additionally, the data of 2-theta at the peak of (112) increases with the doping amount of Ga 2 Se 3 . This is consistent with the result reported by other several works [14][15][16][17].…”

Section: Compositionssupporting

confidence: 94%

Section: Compositionssupporting

confidence: 71%

The Effect of Doping Ratios on Structure, Composition, and Electrical Properties of Absorber Formed by Thermal Sintering

Liu

Chang

Chuang

2013

International Journal of Photoenergy

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“…Although there were some reports that mentioned the formation of a single phase of solid solution CuIn 0.5 Ga 0.5 Se 2 , their XRD peaks showed split reflections, which indicate a mixture of different CuIn x Ga 1−x Se 2 phases. 35,39,40 As a result, properties such as the band gap may not be optimal for good device performance. Thus, in this work the synthesis of monodisperse, singlecrystalline, and single-phase nanoparticles of CIGSe is studied, which is crucial in the control of its properties and hence its application in photovoltaics.…”

Section: Introductionmentioning

confidence: 99%

Evolution Pathway of CIGSe Nanocrystals for Solar Cell Applications

Ahmadi¹,

Pramana²,

Xi³

et al. 2012

J. Phys. Chem. C

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CuIn x Ga 1−x Se 2 nanocrystals synthesized via the hot injection route have been used to make thin film solar cells with high power conversion efficiency. Thus, CuIn x Ga 1−x Se 2 nanocrystals have the potential to provide a low cost and high efficiency solution to harvest solar energy. Stoichiometry control of these nanocrystals offers the possibility of tuning the band gap of this material. It is important to understand how the composition of quaternary CuIn x Ga 1−x Se 2 nanocrystals evolves to control the stoichiometry of this compound. We report a systematic study of the growth and evolution pathways of quaternary CuIn 0.5 Ga 0.5 Se 2 nanocrystals in a hot coordination solvent. The reaction starts by the formation of a mixture of binary and ternary nanocrystals, which transforms subsequently to CuIn 0.5 Ga 0.5 Se 2 nanocrystals. These binary and ternary compounds dissolve in the course of the reaction, so as to provide the molecular precursor for monophasic CuIn 0.5 Ga 0.5 Se 2 nanocrystals to form. Here, we study the growth sequence of these spherical, monophasic CuIn 0.5 Ga 0.5 Se 2 nanocrystals as a function of time. Control experiments indicated that the phase changes of CuIn 0.5 Ga 0.5 Se 2 nanocrystals are temperature-and time-dependent. The change in the stoichiometry of CuIn 0.5 Ga 0.5 Se 2 during growth was estimated using Vegard's law.

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“…Wang and colleagues used a hot‐injection method to synthesize CIGS nanoparticles involving metal‐acetylacetonate precursor thermal decomposition with selenium (Se)–oleylamine (OLA) as the Se source. Their X‐ray diffractometer (XRD) results showed that phase separation occurred for CIGS samples with various ranges of In/Ga concentration 28 . However, no in‐depth explanation and discussion were found in their manuscript.…”

Section: Introductionmentioning

confidence: 98%

Formation Mechanisms of Cu(In_0.7Ga_0.3)Se₂ Nanocrystallites Synthesized Using Hot‐Injection and Heating‐Up Processes

Hsu

Hsiang

Chang

et al. 2011

Journal of the American Ceramic Society

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Nearly monodispersed CuIn 0.7 Ga 0.3 Se 2 (CIGS) nanocrystals were successfully prepared using the thermal decomposition of copper, indium (In), gallium (Ga), and selenium-oleylamine (OLA) complexes via the heating-up process. The phase formation sequence was CuSe-CuInSe 2 -CIGS. The CIGS nanocrystals synthesized using the heating-up process exhibited a single chalcopyrite phase and its chemical composition was close to stoichiometric. However, phase separation of the In-rich and Ga-rich phases was found using the hot-injection method due to the difference in reactivity between In-OLA and Ga-OLA complexes.

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Synthesis of ternary and quaternary CuInxGa1−xSe2 (0≤x≤1) semiconductor nanocrystals

Cited by 22 publications

References 33 publications

The Effect of Doping Ratios on Structure, Composition, and Electrical Properties of Absorber Formed by Thermal Sintering

The Effect of Doping Ratios on Structure, Composition, and Electrical Properties of Absorber Formed by Thermal Sintering

Evolution Pathway of CIGSe Nanocrystals for Solar Cell Applications

Formation Mechanisms of Cu(In_0.7Ga_0.3)Se₂ Nanocrystallites Synthesized Using Hot‐Injection and Heating‐Up Processes

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Synthesis of ternary and quaternary CuInxGa1−xSe2 (0≤x≤1) semiconductor nanocrystals

Cited by 22 publications

References 33 publications

The Effect of Doping Ratios on Structure, Composition, and Electrical Properties of Absorber Formed by Thermal Sintering

The Effect of Doping Ratios on Structure, Composition, and Electrical Properties of Absorber Formed by Thermal Sintering

Evolution Pathway of CIGSe Nanocrystals for Solar Cell Applications

Formation Mechanisms of Cu(In0.7Ga0.3)Se2 Nanocrystallites Synthesized Using Hot‐Injection and Heating‐Up Processes

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Formation Mechanisms of Cu(In_0.7Ga_0.3)Se₂ Nanocrystallites Synthesized Using Hot‐Injection and Heating‐Up Processes