2007
DOI: 10.4028/www.scientific.net/kem.336-338.2163
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Synthesis of Sulfide Nanowire Arrays through Template-Assisted Electrodeposition

Abstract: Sulfide nanowire arrays have been synthesized by DC electrodeposition from an electrolyte containing S in DMSO. The AAO membrane with the barrier layer has been directly used as template in electrodeposition. The as-synthesized products are characterized by SEM, TEM and resonance Raman spectroscopy. CdS and ZnS nanowires have been obtained, respectively.

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Cited by 2 publications
(4 citation statements)
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“…Impurity peak of chromium (Cr) is not reflected in elemental composition and can be ignored. Some other authors [147][148][149] have reported that the atomic composition of Cd and S in CdS nanowires is close to 1:1 stoichiometry using EDAX, as observed in our investigations. Sun Li et al [149] have recently reported synthesis of sulphide nanowire arrays of CdS and ZnS through template-assisted electrodeposition.…”
supporting
confidence: 90%
See 1 more Smart Citation
“…Impurity peak of chromium (Cr) is not reflected in elemental composition and can be ignored. Some other authors [147][148][149] have reported that the atomic composition of Cd and S in CdS nanowires is close to 1:1 stoichiometry using EDAX, as observed in our investigations. Sun Li et al [149] have recently reported synthesis of sulphide nanowire arrays of CdS and ZnS through template-assisted electrodeposition.…”
supporting
confidence: 90%
“…Some other authors [147][148][149] have reported that the atomic composition of Cd and S in CdS nanowires is close to 1:1 stoichiometry using EDAX, as observed in our investigations. Sun Li et al [149] have recently reported synthesis of sulphide nanowire arrays of CdS and ZnS through template-assisted electrodeposition. They observed phonon quantum confinement in nanowires using resonant Raman spectroscopy at room temperature.…”
supporting
confidence: 90%
“…The electrochemical synthesis and characterization of wide band gap binary compound semiconductor nanowires such as ZnS [13], CdS [13,14], CuS [15,16], CdSe [17,18], CdTe [19][20][21][22] and ZnTe [22,23] have been conducted extensively for their wide range of applications in nanoscale sensors, optoelectronic and photovoltaic devices in recent years. However, a synthesis of only a few ternary compound semiconductor nanowires, such as CdZnTe [24,25], CdSSe [26], AgSeTe [27] has been reported so far.…”
Section: Introductionmentioning
confidence: 99%
“…synthesis and characterization of nanowires for window, absorber and back contact materials, the three main component of a photovoltaic device. The CdS and CdTe nanowires have been widely studied [13,14,[19][20][21][22] for their application in nanowires based CdS/CdTe solar cell and other optoelectronic devices. There are, however fewer reports on p-type semiconductor contact material nanowires that can be used in nanowires based CdS/CdTe photovoltaic device for forming ohmic contact to CdTe nanowires base.…”
Section: Introductionmentioning
confidence: 99%