“…The optical band changes due to changes in the morphology originating from the precursor to the nanostructure. 185 In particular, it is affected by different substrates, 105 oxygen partial pressures, 186 precursor types, 168 precursor concentration, 187 growth times, 188 ambient annealing conditions, 179 and annealing temperatures. 167,188 The E opt of films fabricated by the EBE method increases from 2.18 (840 nm) to 2.36 eV (1200 nm) or from 2.04 (oxygen partial pressure 10 À7 mbar) to 2.30 eV (oxygen partial pressure 10 À4 mbar) while E opt decreases from 2.50 to 2.20 eV with increasing film thickness (fabricated by DC sputtering) from 110 to 450 nm.…”