Synthesis of some V2VI3 semiconductors

Boyer, Alexandre; Charles, E.

doi:10.1016/0040-6090(91)90136-l

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…This we attribute to a greater difficulty for the tellurium atoms to stick on silicon than to SiO 2 [6,7]. This we attribute to a greater difficulty for the tellurium atoms to stick on silicon than to SiO 2 [6,7].…”

Section: Films Deposited On Simentioning

confidence: 76%

Preparation of Bi2Te3 Films by Hot-Wall Epitaxy and Characterization of p-n Junction

Charar

Tédenac

Potin

et al. 2000

phys. stat. sol. (a)

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The deposition of bismuth telluride thin films, as well as of Bi-Sb-Te and Bi-Te-Se ternary alloys by hot-wall epitaxy, has been optimized on various substrates like Si, SiO 2 and SiO 2 /Si. In order to enhance the thermoelectric power, we investigated the electrical conductivity s, the Hall coefficient R H and the Seebeck coefficient S. The properties of the epitaxial films grown on SiO 2 and on SiO 2 /Si substrates are rather similar whereas for Bi 2 (Te 1-x Se x ) 3 ternary alloys, the n and p doping is close to the optimum value that can be from bona fide expected. Finally, the study of currentvoltage characteristics at room temperature, for a p-Bi 2 Te 3 -n-Bi 2 Te 3 junction allowed us to determine various and important parameters (n, R s , J s and F B ).

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Section: Films Deposited On Simentioning

confidence: 76%

Preparation of Bi2Te3 Films by Hot-Wall Epitaxy and Characterization of p-n Junction

Charar

Tédenac

Potin

et al. 2000

phys. stat. sol. (a)

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“…The strong tendency in the Sb 2 Te 3 growth to form islands originates from the large vapour pressures of Te and Sb [18]. The re-evaporation and/or thermal decomposition of Sb 2 Te 3 are, as a consequence, very large.…”

Section: Coherent Hetero-epitaxy On Inas(1 1 1)mentioning

confidence: 99%

Hot wall epitaxy of Sb₂Te₃layers: coherent hetero-epitaxy on InAs(1 1 1) and Sb substitution in Cu-mediated growth

Takagaki¹,

Jenichen²,

Jahn³

et al. 2013

Semicond. Sci. Technol.

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The growth of Sb 2 Te 3 layers by means of hot wall epitaxy is investigated. While the layers grow coherently on InAs(1 1 1) substrates owing to the small lattice mismatch, the appropriate substrate temperature is restricted to a narrow range and the surface preparations play a critical role for the growth due to the rapid re-evaporation of Sb 2 Te 3 . We also examine the growth on various substrates having a pre-deposited Cu layer. The Cu layer retains Sb 2 Te 3 at the surface and thus extends the usable substrate-temperature range. During the substitution of the Sb atoms with the Cu atoms, we encounter an incorporation of the group-III elements to the grown layers when III-V compounds are used as the substrates. We additionally present the low-temperature magnetotransport properties in a layer synthesized by the substitution.

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Enhancement of photo-characteristics of Bi2Se3 thin films by post heat treatment at optimal temperature range

Jana

Datta

2013

Journal of Electroanalytical Chemistry

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Synthesis of some V2VI3 semiconductors

Cited by 3 publications

References 3 publications

Preparation of Bi2Te3 Films by Hot-Wall Epitaxy and Characterization of p-n Junction

Preparation of Bi2Te3 Films by Hot-Wall Epitaxy and Characterization of p-n Junction

Hot wall epitaxy of Sb₂Te₃layers: coherent hetero-epitaxy on InAs(1 1 1) and Sb substitution in Cu-mediated growth

Enhancement of photo-characteristics of Bi2Se3 thin films by post heat treatment at optimal temperature range

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Synthesis of some V2VI3 semiconductors

Cited by 3 publications

References 3 publications

Preparation of Bi2Te3 Films by Hot-Wall Epitaxy and Characterization of p-n Junction

Preparation of Bi2Te3 Films by Hot-Wall Epitaxy and Characterization of p-n Junction

Hot wall epitaxy of Sb2Te3layers: coherent hetero-epitaxy on InAs(1 1 1) and Sb substitution in Cu-mediated growth

Enhancement of photo-characteristics of Bi2Se3 thin films by post heat treatment at optimal temperature range

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Hot wall epitaxy of Sb₂Te₃layers: coherent hetero-epitaxy on InAs(1 1 1) and Sb substitution in Cu-mediated growth