2021
DOI: 10.1007/s11663-021-02103-y
|View full text |Cite
|
Sign up to set email alerts
|

Synthesis of Silicon Sulfide by Using CS2 Gas

Abstract: Silicon sulfide (SiS2) was synthesized from Si, SiC, Si3N4, and a eutectic Al-Si liquid. An Ar-CS2 gas mixture, after bubbling through liquid CS2, was passed over pulverized Si, SiC, Si3N4, or a eutectic Al-Si alloy liquid. White, needle-shaped SiS2 was precipitated as a single phase on the colder downstream surface when Si powder in a SiO2 liner was heated over 1273 K. This deposition mechanism involves a reaction between Si and CS2 to form SiS2, with the vaporization of SiS(g) and deposition as SiS2(s) from … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
2

Citation Types

0
11
0

Year Published

2022
2022
2023
2023

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(11 citation statements)
references
References 47 publications
(158 reference statements)
0
11
0
Order By: Relevance
“…The main reaction to synthesize SiS 2 (s) ( eq 5 ) proceeds below 1993 K and the side reaction to SiS(g) ( eq 6 ) starts to proceed when T > 628 K. 33 The former dominates because it has a larger Gibbs free-energy (absolute value) than the latter. Besides, the forward reactions in eqs 7 and 8 would be very difficult to happen below 1993 K (also in this work), while the partial pressures of SiS(g) are 10 –3 atm in eq 7 ( 3 , 37 ) and 10 –5 atm in eq 8 , respectively. 3 , 37 This means, if the SiS(g) was generated via eq 6 , it would tend to produce SiS 2 (s) and Si(s) as in the backward reaction of eq 7 or react with S 2 (g) to form SiS 2 (s) as in the backward reaction of eq 8 .…”
Section: Resultsmentioning
confidence: 73%
See 4 more Smart Citations
“…The main reaction to synthesize SiS 2 (s) ( eq 5 ) proceeds below 1993 K and the side reaction to SiS(g) ( eq 6 ) starts to proceed when T > 628 K. 33 The former dominates because it has a larger Gibbs free-energy (absolute value) than the latter. Besides, the forward reactions in eqs 7 and 8 would be very difficult to happen below 1993 K (also in this work), while the partial pressures of SiS(g) are 10 –3 atm in eq 7 ( 3 , 37 ) and 10 –5 atm in eq 8 , respectively. 3 , 37 This means, if the SiS(g) was generated via eq 6 , it would tend to produce SiS 2 (s) and Si(s) as in the backward reaction of eq 7 or react with S 2 (g) to form SiS 2 (s) as in the backward reaction of eq 8 .…”
Section: Resultsmentioning
confidence: 73%
“…The preferred orientation of orthorhombic SiS 2 has been reported before, such as SiS 2 with a fibrous, a needle-shaped, or a pillar-shaped morphology/structure. 3 , 13 , 16 However, so far, there is little explanation for the growth mechanism. Some orthorhombic materials with preferred orientation have also been investigated, such as Bi 2 S 3 nanorods 41 − 43 or nanotubes, 43 Sb 2 S 3 nanorods, 44 BiSCl polygonal tubes, BiSI bundle-rods, 45 and so on.…”
Section: Resultsmentioning
confidence: 99%
See 3 more Smart Citations