Synthesis of Silicon Nitride Ceramic Material using Direct Nitridation Process

Tran, Cuong; La, Duong Duc

doi:10.22161/ijaers.5.8.14

Cited by 4 publications

(3 citation statements)

References 11 publications

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“…The two specific phases are detected in XRD patterns such as α -Si 3 N 4 , β -Si 3 N 4 and Si. As can be seen from Figure 5, the concentration of the α phase is higher than that of the β phase and this leads to enhancement of the hardness of the coated sample [19]. α -Si 3 N 4 with accumulating track in structure is generally harder than the β -Si 3 N 4 [20].…”

Section: Resultsmentioning

confidence: 99%

Optimization of the Si₃N₄ coating formation through plasma spraying on Inconel 738

Najafizadeh,

Ghasempour-Mouziraji,

Shahrani

et al. 2023

Tribology - Materials, Surfaces & Interfaces

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In the present study, the deposition of silicon nitride (Si 3 N 4 ) coating on Inconel 738 through plasma spray has been investigated. For producing the Si 3 N 4 coating, different times (6, 8 and 10 s), different distances of the plasma spray torch from the substrate (30, 35 and 40 mm) and different currents for plasma spraying (3000, 3250 and 3500 A) were employed. For the characterisation of the coatings, SEM (thickness), XRD, micro-hardness and adhesion of the samples were measured. The coatings' surface morphology was investigated through SEM. Based on the experimental results, by using a spraying time of 10 s, a distance of the torch of 40 mm and a current of 3500 A, high microhardness and adhesion of the coatings are obtained. On the other hand, the thickness of the coating increased by reducing the distance and increasing spray time and current.

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Section: Resultsmentioning

confidence: 99%

Optimization of the Si₃N₄ coating formation through plasma spraying on Inconel 738

Najafizadeh,

Ghasempour-Mouziraji,

Shahrani

et al. 2023

Tribology - Materials, Surfaces & Interfaces

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show abstract

“…Because of their high thermal conductivity and excellent mechanical properties, silicon nitride (Si 3 N 4 ) ceramics have been successfully applied as insulated substrates in the semiconductor power modules mounted on inverters assembled in Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV) [1,2]. There exist three crystallographic structures of Si 3 N 4 , designated as α-, βand γ-phases (Figure S1 and Table S1) [3][4][5]. The αand β-Si 3 N 4 , phases are common and can be produced under normal pressure conditions, while the γ-phase can only be synthesized under high pressures above 13 GPa and temperatures above 1600 • C [4,5].…”

Section: Introductionmentioning

confidence: 99%

Oxide Additive-Free α- → β-Si<sub>3</sub>N<sub>4</sub> Phase Transformation at 1900 °C

Imamura,

Kura,

Kawata

et al. 2023

Preprint

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Oxide additive-free α- ⇀ β-Si3N4 phase transformation of a high-purity commercial α-Si3N4 powder was investigated at 1600 to 1900 ℃ under nitrogen pressure of 980 kPa. The XRD analysis revealed that the α- ⇀ β-Si3N4 phase transformation proceeded mainly at 1900 ℃, and was completed by the extensive 1900 ℃-heat treatment for 20 h. This phase transformation temperature was 33 ℃ lower than the theoretical α-Si3N4 dissociation temperature and confirmed as completely different from that often discussed for the liquid phase sintering of α-Si3N4 powder by direct comparison with the phase transformation behavior of a reference powder, α-Si3N4 powder doped with 1 mol% Y2O3. The unique α- ⇀ β-Si3N4 phase transformation was further studied by a set of characterization techniques including elemental analysis, HAADF-STEM and STEM-EDS analyses. The results strongly suggested that the oxide additive-free α- ⇀ β-Si3N4 phase transformation was governed by the for-mation of metastable solid solution between α-Si3N4 and impurity oxygen of approximately 0.6 wt%, which promoted the dissociation below the theoretical α-Si3N4 dissociation temperature to afford thermodynamically favorable β-Si3N4. Along with the β-Si3N4 formation, the impurity oxygen was concentrated at the Si3N4 crystal grain boundaries and subsequently released from the sample via the grain boundary diffusion.

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Section: Introductionmentioning

confidence: 99%

Impurity Oxygen-Triggered α- → β-Si3N4 Phase Transformation at 1900 °C

Imamura,

Kura,

Kawata

et al. 2023

Crystals

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Oxide additive-free α- → β-Si3N4 phase transformation of a high-purity commercial α-Si3N4 powder was investigated at 1600 to 1900 °C under a nitrogen pressure of 980 kPa. The XRD analysis revealed that the α- → β-Si3N4 phase transformation proceeded mainly at 1900 °C, and was completed by the extensive 1900 °C heat treatment for 20 h. This phase transformation temperature was 33 °C lower than the theoretical α-Si3N4 dissociation temperature and was confirmed as completely different from that often discussed for the liquid-phase sintering of α-Si3N4 powder by direct comparison with the phase transformation behavior of a reference powder, α-Si3N4 powder doped with 1 mol% Y2O3. The unique α- → β-Si3N4 phase transformation was further studied by a set of characterization techniques including elemental analysis, HAADF-STEM and STEM-EDS analyses. The results strongly suggested that the oxide additive-free α- → β-Si3N4 phase transformation was governed by the formation of a metastable solid solution between α-Si3N4 and impurity oxygen of approximately 0.6 wt%, which promoted the dissociation below the theoretical α-Si3N4 dissociation temperature to afford thermodynamically favorable β-Si3N4. Along with the β-Si3N4 formation, the impurity oxygen concentrated at the grain boundaries was released from the sample via the grain boundary diffusion to afford high-purity β-Si3N4.

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Synthesis of Silicon Nitride Ceramic Material using Direct Nitridation Process

Abstract: Abstract-

Cited by 4 publications

References 11 publications

Optimization of the Si₃N₄ coating formation through plasma spraying on Inconel 738

Optimization of the Si₃N₄ coating formation through plasma spraying on Inconel 738

Oxide Additive-Free α- → β-Si<sub>3</sub>N<sub>4</sub> Phase Transformation at 1900 °C

Impurity Oxygen-Triggered α- → β-Si3N4 Phase Transformation at 1900 °C

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Synthesis of Silicon Nitride Ceramic Material using Direct Nitridation Process

Abstract: Abstract-

Cited by 4 publications

References 11 publications

Optimization of the Si3N4 coating formation through plasma spraying on Inconel 738

Optimization of the Si3N4 coating formation through plasma spraying on Inconel 738

Oxide Additive-Free α- → β-Si<sub>3</sub>N<sub>4</sub> Phase Transformation at 1900 °C

Impurity Oxygen-Triggered α- → β-Si3N4 Phase Transformation at 1900 °C

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Resources

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Optimization of the Si₃N₄ coating formation through plasma spraying on Inconel 738

Optimization of the Si₃N₄ coating formation through plasma spraying on Inconel 738