Synthesis of Silicon Carbide Nanowires from a Mixture of CaCO ₃ and Si Powders

Boron nitride multiwall nanotubes decorated with BN nanosheets

“…This homogeneous coating provides controlled asperities from which ''BN NTs'' can nucleate. [22][23][24] (2) At temperatures below 1000 C, and according to studies of J. Economy et al 29 and our previous observations, 24 ammonia reacts with boron oxide to give volatile precursors, presumably boroxine derivatives, which further condense at the lower face of the condensation plate, due to a weak thermal gradient.…”

“…(1) We have previously demonstrated that the decomposition of carbon precursors into volatile hydrocarbons permits the surface (nano)structuring of the graphite condensation plate, which favors the growth of 1D nanostructures, such as SiC nanowires, 22,23 and BN tubular micro-/nanostructures 24 instead of the formation of a (2D) coating onto the substrate. To confirm this effect, different experiments similar to the one depicted above but performed by omitting or modifying the carbon source (polypropylene and/or amorphous carbon) and the condensation plate was undertaken.…”

“…Further efforts will be devoted to examine the influence of the experimental parameters on the geometrical features of the BN NTs and/or nanosheets, to fill the inner part of the NTs with different materials (i.e. SiC) 22,23,33,34 and to characterize their chemical and physical properties. The fabrication of BN NTs covered by BN nanosheets opens new perspectives in different fields such as composite materials (i.e.…”

“…The present technique is related to one that we have developed for growing silicon carbide nanowires, 22,23 and BN tubular micro-/nanostructures. 24 The latter can be indeed grown from the high-temperature reaction of boron source (boric acid) with carbon-containing volatiles onto the surface of a condensation plate of carbon.…”

Rayleigh instability induced SiC/SiO2 necklace like nanostructures

“…The previous study indicates that heat treatment at 1400 uC in ammonia atmosphere changes the SiC NWs into Si 3 N 4 nanorods. 22 The annealing up to 550 uC under air converted SiC@C nanocables (NCs) into SiC@SiO 2 NCs, 23 while by a simple thermal treatment at high temperature (1600-1800 uC), we were able to fabricate a novel geometry of faceted SiC NWs, as well as to synthesize CNTs filled with faceted b-SiC nanocrystals. 24 In the present paper, we use the coaxial SiC@SiO 2 NCs as starting materials for the fabrication of SiC@SiO 2 pearl necklace-like nanostructures.…”