Synthesis of silicon carbide nanowires in a catalyst-assisted process

In situ growth of SiC nanowires on RS-SiC substrate(s)

“…Therefore, the SiC nanowires grew preferentially along the /1 1 1S direction to maintain the lowest growing energy. SiC nanowires/whiskers growing along the /1 1 1S direction have been reported in several studies [2,5,9,10,17].…”

“…Contamination by the metallic catalysts were also found in their nanorods. The catalyst-assisted VLS approach was also used by several other authors [9,10]. Recently, SiC nanorods were prepared by a carbothermal reduction method, which is a template/catalyst free method [11].…”

Microstructures of the silicon carbide nanowires obtained by annealing the mechanically-alloyed amorphous powders

“…For example, the boron oxide film on the surface of the boron nitride particles, the silicon oxide film on the surface of the silicon particles, unsealed packing and the impure argon may bring oxygen into the raw materials. By the abovementioned methods for the preparation of SiC nanowires, metal catalysts, such as ferrocene, ferric nitrate and lanthanum nitrate, are usually added into the raw materials to promote the growth of nanowires [21,22]. Researches also find that the nature and quantity of the adopted catalysts have important influence on the growth and morphologies of the obtained nanowires.…”

Synthesis of One-Dimensional Nanostructured Silicon Carbide by Chemical Vapor Deposition

“…There are reports about the application of CVD for growing SiC nanorods on SiC substrates using SiCl 4 + CCl 4 [9] and CH 3 SiCl 3 [10] gaseous precursors or on silicon wafers using a CH 4 gaseous precursor [11], always in presence of hydrogen as a carrier gas and reagent. Methods such as the rapid thermal process, a common technique in the semiconductor industry nowadays, and the thermal evaporation process using Al as a catalyst have also been applied to grow SiC nanorods [5,12]. The SiCl 4 and CCl 4 gaseous precursors have been used in a method based on pressure heating in an autoclave at 400 ° C in the presence of a reducing agent (Na) [13].…”

“…The conditions used in [11][12][13][14][15] have led to the growing of nanorods of the cubic 3C polytype exhibiting high-density microtwins normal to the 〈 111 〉 growth direction. Due to the existence of these planar defects, the outer surface of these 3C SiC nanorods is composed of nanoscale {111} facets.…”