Synthesis of S-doped graphene by liquid precursor

Gao, Hui; Liu, Zheng; Li, Song; Guo, Wenhua; Gao, Wei; Ci, Lijie; Rao, A.K.; Quan, Weijin; Vajtai, Róbert; Ajayan, Pulickel M.

doi:10.1088/0957-4484/23/27/275605

Cited by 182 publications

(119 citation statements)

References 28 publications

(37 reference statements)

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“…possible to synthesise S-doped graphene by a chemical vapour deposition approach using a solution of elemental sulphur in hexane as the precursor. 130 As can be derived from data published by Yang et al, another way to obtain sulphurdoped graphene is to blend graphene oxide homogeneously with benzyl disulde, followed by subsequent annealing (compare the scheme in Fig. 4).…”

Section: S-doped Graphene Based Materials For Orrmentioning

confidence: 99%

Doping carbons beyond nitrogen: an overview of advanced heteroatom doped carbons with boron, sulphur and phosphorus for energy applications

Paraknowitsch

Thomas

2013

Energy Environ. Sci.

1,645

999

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Heteroatom doped carbon materials represent one of the most prominent families of materials that are used in energy related applications, such as fuel cells, batteries, hydrogen storage or supercapacitors. While doping carbons with nitrogen atoms has experienced great progress throughout the past decades and yielded promising material concepts, also other doping candidates have gained the researchers' interest in the last few years. Boron is already relatively widely studied, and as its electronic situation is contrary to the one of nitrogen, codoping carbons with both heteroatoms can probably create synergistic effects. Sulphur and phosphorus have just recently entered the world of carbon synthesis, but already the first studies published prove their potential, especially as electrocatalysts in the cathodic compartment of fuel cells. Due to their size and their electronegativity being lower than those of carbon, structural distortions and changes of the charge densities are induced in the carbon materials. This article is to give a state of the art update on the most recent developments concerning the advanced heteroatom doping of carbon that goes beyond nitrogen. Doped carbon materials and their applications in energy devices are discussed with respect to their boron-, sulphur-and phosphorus-doping. Broader contextThe research and design of novel materials that are applicable in various energy devices represent one of the central and most thriving subjects within today's scientic work. The challenges do not only rely on the tremendous need to overcome traditional fossil fuel based energy recovery. While a lot of sustainable concepts already exist, these require the development of high performance materials that are able to cope with certain challenges, e.g. the dependence on highly expensive and rather not abundantly available noble metals, and also a lack of long term stability of those. Researchers have been carrying out numerous studies concentrating on nding alternative materials that can be applied in novel energy devices. Those alternative materials should most preferably be free of noble metals, avoid expensive precursor systems, be sustainable and not rely on the fossil energy sources that are to be replaced, and of course exhibit high activity in the devices they are designed for. One class of materials in whose development and understanding researchers have put strong effort is heteroatom-doped carbon materials. By heteroatom doping the properties are altered compared to crude carbon materials. The by far most intensely studied doping candidate is nitrogen, capable of not only increasing electric conductivity, but also the catalytic activity of carbons. Such N-doped carbons have advanced tremendously in the past few years, especially by proving their usefulness as electrocatalysts for the reduction of oxygen in fuel cell cathodes, or as electrode materials in supercapacitors. Meanwhile the spectrum of doping has been widened, and novel doped carbons have been reported, indicating the promising pote...

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Section: S-doped Graphene Based Materials For Orrmentioning

confidence: 99%

Doping carbons beyond nitrogen: an overview of advanced heteroatom doped carbons with boron, sulphur and phosphorus for energy applications

Paraknowitsch

Thomas

2013

Energy Environ. Sci.

1,645

999

View full text Add to dashboard Cite

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“…For example, synthesis of N-or B-doped graphene has been well studied especially for the application as semiconductor materials [8,14,15]. By contrast, S-doping is generally considered more difficult due to its larger atom compared with C atom [16]. Over about the past three years, researchers have successfully produced S-doped graphene using chemical vapor deposition technology or reaction between graphene (or GO and its derivatives) and S-containing precursors [5,16,17].…”

Section: Introductionmentioning

confidence: 99%

Tuning sulfur doping in graphene for highly sensitive dopamine biosensors

Liu

Zhao

et al. 2015

Carbon

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“…For example, 27.3 nm for graphene on Cu from hexane as liquid precursor has been reported in the work [27]. Guermoune et al [22] received higher values (168 nm) for graphene obtained on Cu from ethanol precursor but in markedly lower temperatures.…”

Section: Stress Distribution In Graphene Crystalmentioning

confidence: 83%

“…Another liquid carbon precursor found in a recent scientific literature is hexane [25,26]. Gao et al [27] showed the synthesis of S-doped graphene on Cu versus regular one from hexane. In a recent work, Gan et al [28] demonstrated a ternary Cu 2 NiZn alloy as a substrate and compared it to Cu and Cu/Ni.…”

Section: Introductionmentioning

confidence: 99%

Comparative Morphological Analysis of Graphene on Copper Substrate obtained by CVD from a Liquid Precursor

et al. 2017

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Graphene film has been produced on untreated Cu substrate by a chemical vapor deposition technique in ambient pressure with liquid ethanol serving as the carbon precursor. The obtained material has been subjected to morphological study, directly on Cu substrate, by means of optical microscopy, scanning electron microscopy, atomic force microscopy, and a detailed Raman analysis. As a benchmark material, graphene obtained on Cu by a conventional CVD from gaseous methane was used. This simple experimental setup has proved to enable obtaining large area graphene samples with nearly 100% substrate coverage and large domains of one carbon layer. As compared to graphene from gaseous precursor, the presented approach resulted in visibly more defects and impurities. These imperfections are due to more complex precursor molecular structure and lack of Cu pretreatment with hydrogen, the later cause being easy to eliminate in course of further optimization of the method. The described approach can be regarded as a viable, low-cost, and experimentally simple alternative for the existing techniques of producing large area graphene. By providing direct comparison with the conventional method, the paper's intention is to provide deeper insight and to fill gap in the understanding of mechanisms involved in graphene formation on copper.

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Synthesis of S-doped graphene by liquid precursor

Cited by 182 publications

References 28 publications

Doping carbons beyond nitrogen: an overview of advanced heteroatom doped carbons with boron, sulphur and phosphorus for energy applications

Doping carbons beyond nitrogen: an overview of advanced heteroatom doped carbons with boron, sulphur and phosphorus for energy applications

Tuning sulfur doping in graphene for highly sensitive dopamine biosensors

Comparative Morphological Analysis of Graphene on Copper Substrate obtained by CVD from a Liquid Precursor

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