Synthesis of rGO–Zn_0.8Cd_0.2S via in situ reduction of GO for the realization of a Schottky diode with low barrier height and highly enhanced photoresponsivity

Abstract

Application of rGO–Zn0.8Cd0.2S in Schottky barrier diode with low barrier height and highly enhanced photoresponse.

Electrical transport properties and ultrafast optical nonlinearity of rGO–metal chalcogenide ensembles

“…As a result mobility increases under illumination as observed previously for rGObased composites at room temperature. 23 It is observed that under illumination the m values have increased by $1.8 times for rGO, $2.5 times for C1, and $10.2 times for C2 compared to dark conditions. Also, this enhancement is almost constant with temperature.…”

“…20,21 The SCLC model is a very popular method to calculate carrier mobility in rGObased systems. 22,23 In semiconductor transport studies, carrier mobility is considered as an important gure of merit alongside the carrier concentration and conductivity. 24 The nonlinear optical (NLO) properties of GO, rGO and rGOnanomaterial composites have been considerably studied by the scientic community.…”

An Iron Oxychloride/Reduced Graphene Oxide Heterojunction with Enhanced Catalytic Performance as a Photo‐Fenton Catalyst

“…However, the materials composited with FeOCl mainly act as carriers rather than semiconductors. Reduced graphene oxide (rGO) nanosheets are an excellent precursor for the immobilization of semiconductors to enhance their catalytic performances, for example, Fe 3 O 4 /rGO, Fe 2 O 3 /rGO, and FeOOH/rGO . Great efforts have been made to use the electrical conductivity of rGO in the Fenton reaction, but the semiconductor characteristics of rGO are often neglected in the photo‐Fenton reaction.…”

Water Tetramer Confinement and Photosensitive Schottky Behavior of a 2D Coordination Polymer

“…Specific detectivity gives the idea about the potential ability of the material in the field of detector based application. The value obtained for compound 1 is in the order of 10 9 Jones (Table ), which is quite appreciable for a basic schottky diode . Specific detectivity is expressed as …”