Synthesis of particulate InN crystal by the reaction of InCl3 with LiNH2

Abstract

A method to synthesize indium nitride (InN) crystal by the reaction of InCl 3 with LiNH 2 under N 2 atmosphere was studied. InN was formed at the temperature ranging from 350 to 450°C under 0.1 MPa N 2 atmosphere. X-ray diffraction (XRD) pattern and transmission electron microscope (TEM) image indicated that synthesized InN was crystalline powder with a wurtzite structure. Band gap was determined by plotting (¡h¯) 2 vs. h¯for direct transition and the value of 0.83 eV was obtained.

A molten salt-based nitridation approach for synthesizing nanostructured InN electrode materials

“…Particulate InN crystals with a diameter of approximately 800 nm were obtained. 25 These studies have demonstrated the effect of raw materials (In 2 O 3 and LiNH 2 ) on the morphology of InN crystals. However, none of the above-mentioned studies have investigated the morphology control of InN particles at the nanoscale and their photoelectrochemical properties.…”

“…26 Based on the results, we anticipated that InN nanocrystals could be synthesized using LiClcontaining molten salts. In this paper, we use a KCl-LiCl mixture with eutectic composition of 60% mol LiCl and 40% mol KCl that has a melting point of 353 C (as shown in Table S1 † 28 ), taking into consideration that the molten salts for nitridation reactions of InN should have a melting point that is lower than the synthesis temperature at 400-500 C. 25,29 Herein, we present, for the rst time, the effect of molten salt on the nitridation synthesis of single-phase InN nanocrystals. The InN nanocrystals were successfully obtained at relatively low temperatures ranging from 400 C to 500 C. In addition, the photoelectrochemical cell fabricated using the InN electrodes exhibited a photocurrent response under visible and near-IR light irradiation.…”