2024
DOI: 10.1016/j.apsusc.2023.158623
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Synthesis of one-dimensional hierarchical Bi2O3 with enhanced photocatalytic reduction of Cr(VI) and degradation of organic compounds under simulated sunlight

Yi Zhang,
Yuchen Li,
Yin Peng
et al.
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Cited by 2 publications
(4 citation statements)
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“…For an indirectly allowed transition, the value of n is 4, while for a directly allowed transition, the value of n is 1. The n values for both Bi 4 O 5 Br 2 and Bi 2 O 3 are 4, , i.e., Bi 4 O 5 Br 2 and Bi 2 O 3 are all indirect band-gap semiconductors. The determined E g values of as-prepared Bi 4 O 5 Br 2 and Bi 2 O 3 are ∼2.39 and 2.58 eV, respectively (Figure b), close to reported results. , …”
Section: Resultsmentioning
confidence: 99%
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“…For an indirectly allowed transition, the value of n is 4, while for a directly allowed transition, the value of n is 1. The n values for both Bi 4 O 5 Br 2 and Bi 2 O 3 are 4, , i.e., Bi 4 O 5 Br 2 and Bi 2 O 3 are all indirect band-gap semiconductors. The determined E g values of as-prepared Bi 4 O 5 Br 2 and Bi 2 O 3 are ∼2.39 and 2.58 eV, respectively (Figure b), close to reported results. , …”
Section: Resultsmentioning
confidence: 99%
“…The n values for both Bi 4 O 5 Br 2 and Bi 2 O 3 are 4, 12,36 i.e., Bi 4 O 5 Br 2 and Bi 2 O 3 are all indirect band-gap semiconductors.…”
Section: Preparation Of Bimentioning
confidence: 99%
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