Synthesis of novel fluoropolymers for 157-nm photoresists by cyclopolymerization

Kodama, S.; Kaneko, Isao; Takebe, Yasushi; Okada, Shusuke; Kawaguchi, Yasuhide; Shida, Naomi; Ishikawa, Seiichi; Toriumi, Mitsuhiro; Itani, Toshiro

doi:10.1117/12.474160

Cited by 31 publications

(5 citation statements)

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“…As in the 193 nm photoresist systems, alternating copolymer systems of electron‐rich olefins with electron‐poor monomers using free radical initiators have also been used as 157 nm photoresists. Cyclopolymerization of monomers containing both electron‐rich and electron‐deficient double bonds in a single molecule was utilized 68,77. Copolymers of norbornenes with tetrafluoroethlyene have also been prepared.…”

Section: Fluorinated Polymer Resists For 157 Nm Lithographymentioning

confidence: 99%

Flow cytometry detection of Shiga toxins in the blood from children with hemolytic uremic syndrome

Tazzari¹,

Ricci²,

Carnicelli³

et al. 2004

Cytometry Part B Clinical

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Results: The method was quick (3 h), sensitive (femtomoles), and capable of detecting both Stxs. The presence of Stxs was detected on PMNs from six patients with HUS: four patients had serologic or microbiological evidence of STEC infection, whereas the other two patients had no evidence of STEC infection when employing the standard diagnostic methods. Conclusions: The method described is rapid, simple, and based on commercially available reagents, and it might be more sensitive than the standard methods for diagnosis of STEC infection. It also allows the detection of Stxs in blood, a key step to monitor the pathogenesis of HUS.

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Section: Fluorinated Polymer Resists For 157 Nm Lithographymentioning

confidence: 99%

Flow cytometry detection of Shiga toxins in the blood from children with hemolytic uremic syndrome

Tazzari¹,

Ricci²,

Carnicelli³

et al. 2004

Cytometry Part B Clinical

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“…However, attaching adamantyl to the polymer backbone increases significantly the temperature to 1.34 and 1.30 for PR 7 and 8, respectively. Typically these ester compounds are chosen in the resist development to increase the initial T g …”

Section: Resultsmentioning

confidence: 99%

The Influence of H₂Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition

Schepper

Otell

Pret³

et al. 2015

Plasma Process. Polym.

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To meet the demands for sub‐20 nm feature devices in the semiconductor industry, minimizing the line width roughness (LWR) is a critical concern for ultra‐large scale integrated circuit manufacturing. Post‐lithography treatments should reduce the LWR by at least 50% to meet the technology requirements, but the available post‐lithography strategies come short. To support the delayed progress, an in depth understanding of the interaction of such post‐lithography treatments with EUV‐specific resist functionalities is required. In this article, we analyze the change in line widths and LWR's for 30–35 nm lines using EUV photoresists. In addition we study the effect of the chemical composition on the reduction of LWR after hydrogen plasma treatment using “artificially” prepared reference resists. We highlight the effect of the fluorine unit, ester functionalities and photo acid generator/quencher loading on the LWR improvement and H2 plasma induced reflow.

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“…An amazing progress has been made in a few short years; transparency down to ∼0.5/μm from 5–6 (allowing imaging of a 200 nm thick film!) and resolution down to 60 nm 43–44…”

Section: Current Status and Futurementioning

confidence: 99%

Chemical amplification resists: Inception, implementation in device manufacture, and new developments

Itô

2003

J. Polym. Sci. A Polym. Chem.

109

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ABSTRACT:The chemical amplification concept aimed at dramatically boosting the resist sensitivity was invented at IBM Research in San Jose, CA, in 1980. The sensitivity enhancement is achieved by generating acid by irradiation, which induces a cascade of chemical transformations in a resist film. A chemically amplified resist based on acid-catalyzed deprotection was quickly employed in the mid-80s in manufacture of 1 megabit (Mbit) dynamic random access memory (DRAM) devices by deep ultraviolet (UV) (ϳ250 nm) lithography in IBM. The unexpectedly high-resolution capability of chemical amplification resists promoted their acceptance in the resist community and the microelectronics industry. All the advanced lithographic technologies (current workhorse 248 nm, maturing 193 nm, and emerging 157 nm, extreme UV, and projection electron beam) depend on chemical amplification resists.This article describes the invention, implementation in device manufacturing, current status, and future perspective of chemical amplification resists.

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Synthesis of novel fluoropolymers for 157-nm photoresists by cyclopolymerization

Cited by 31 publications

References 0 publications

Flow cytometry detection of Shiga toxins in the blood from children with hemolytic uremic syndrome

Flow cytometry detection of Shiga toxins in the blood from children with hemolytic uremic syndrome

The Influence of H₂Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition

Chemical amplification resists: Inception, implementation in device manufacture, and new developments

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Synthesis of novel fluoropolymers for 157-nm photoresists by cyclopolymerization

Cited by 31 publications

References 0 publications

Flow cytometry detection of Shiga toxins in the blood from children with hemolytic uremic syndrome

Flow cytometry detection of Shiga toxins in the blood from children with hemolytic uremic syndrome

The Influence of H2Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition

Chemical amplification resists: Inception, implementation in device manufacture, and new developments

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Product

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The Influence of H₂Plasma Treatment on LWR Mitigation: The Importance of EUV Photoresist Composition