Synthesis of nanocrystalline GaN by the sol–gel method

Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method

“…The lattice parameters of GaN and InGaN NPs are determined from the symmetric and asymmetric diffraction planes and the estimated lattice parameter values are presented in Table 1. The in-plane and out-plane lattice parameters of GaN NPs (a = 3.199 Å and c = 5.198 Å ) agree well with the reported values [19]. The In composition in the InGaN nanopowder was determined from the XRD results using the Vegard's law [23], which is given by: show the FESEM images of GaN and InGaN NPs with different magnification respectively, which reveals that the agglomeration of NPs in both nanocrystals due to van der Waals forces between the particles [18].…”

“…GaN NPs have been synthesized by a variety of methods, which includes pyrolysis at high temperatures [15], formation of colloidal GaN quantum dots [16], chemical method [17], combustion method [18] and sol-gel method [19]. However, there are very few reports on the synthesis of InGaN NPs [20,21] have been found in literature.…”

Synthesis and characterization of gallium nitride nanoparticles by using solvothermal-soft-chemical methodology

“…In addition, the probability for optical transitions increases due to its direct-gap intrinsic properties. Therefore, gallium nitride, which is linked with other elements from group IIIA, can be used in many applications due to its remarkable spectra from ultraviolet to infrared region [5].…”

“…However, the use of different gallium precursors, such as GaAs and GaOOH in the presence of ammonia, has been reported more recently [7]. On the other hand, the growth of this non-oxide compound can only be performed with very specific materials, such as sapphire [5]. Moreover, different physical methodologies have been developed for material growth including physical vapor deposition, molecular beam epitaxy, arc discharge, and magnetron sputtering.…”

Synthesis, thermal stability, and photocatalytic activity of nanocrystalline gallium nitride via the reaction of Ga2O3 and NH4Cl at low temperature

“…Li et al [21] reported a facile solid-state reaction method to prepare GaN nanoparticles through using an organic reagent cyanamide (CN 2 H 2 ) and Ga 2 O 3 as precursors in a silica ampoule at 750 • C. Ogi et al [22] reported that nanocrystalline GaN was also successfully synthesized from Ga 2 O 3 nanoparticles derived from salt-assisted spray pyrolysis. Qiu et al [23] reported the sol-gel method to synthesize nanocrystalline GaN. Kano et al [24] reported mechanical alloying method to synthesize GaN powder by mechanochemical treatment of gallium oxide (Ga 2 O 3 ) and lithium nitride (Li 3 N) metal under NH 3 gas environment.…”