Synthesis of nano-structure tungsten nitride thin films on silicon using Mather-type plasma focus

Abstract

Nano-structure thin film of tungsten nitride was deposited onto Si-substrate at room temperature using Mather-type plasma focus (3.3 kJ) machine. Substrate was exposed against 10, 20, 30, and 40 deposition shots and its corresponding effect on structure, morphology, conductivity and nano-hardness has been systematically studied. The X-ray diffractormeter spectra of the exposed samples show the presence of various phases of WN and WN 2 that depends on number of deposition shots. Surface morphological study revealed the uniform distribution of nano-sized grains on deposited film surface. Hardness and conductivity of exposed substrate improved with higher deposition shots. X-ray photo-electron spectroscopy survey scan of 40 deposition shots confirmed the elemental presence of W and N on Si-substrate.

Role of sputter powers and deposition temperatures towards the growth of nc‐W2N/a‐Si3N4 nanocomposite coating

“…The contents of Si increase gradually in the films with an increase in Si 3 N 4 power as expected. At 50 W Si 3 N 4 power (Figure 3a), the presence of granular, irregular and sharp‐edged grains/grain‐clusters of W 2 N can be clearly separated by amorphous Si 3 N 4 boundaries regions 21 . Similar observation was also reported in different nanocomposite arrangements, where amorphous silicon nitride normally sits around boundaries metal nitride cluster 6,7,12,13 .…”

“…GIXRD plots confirm the formation of polycrystalline cubic phase of W 2 N. The signature of the Si 3 N 4 phase is not identified due to its amorphous nature. The formation enthalpy of W 2 N and Si 3 N 4 are −22 kJ/mol and ~−850 kJ/mol, respectively 8,21 . Since the formation enthalpy of Si 3 N 4 is comparatively higher than W 2 N; hence Si 3 N 4 tends to form faster than W 2 N. Eventually, Si 3 N 4 target power was increased with respect to W 2 N. Therefore, Si 3 N 4 dominates to form W 2 N crystals at higher Si 3 N 4 power.…”

Síntesis y caracterización electroquímica de recubrimientos de multicapas metal cerámico de W/WN, Ti/TiN y WTiN

“…Se ha observado una mayor resistencia a la corrosión en los recubrimientos multicapa debido a que en las interfaces se bloquea el crecimiento de defectos puntuales originados en la interface recubrimiento-sustrato [4][5]. Se ha reportado una alta resistencia al desgaste, buenas propiedades mecánicas y alta estabilidad térmica de los recubrimientos con contenido de W así como del ternario WTiN [6][7][8][9][10][11][12]. Las propiedades de las multicapas y las particulares de los recubrimientos basados en W y Ti motivaron la aplicación de este tipo de recubrimientos sobre aceros AISI 1060 para mejorar su resistencia a la corrosión y por otra parte se espera también una mejora en su capacidad de corte [13].…”