Synthesis of nano-scale silicon wires by excimer laser ablation at high temperature

Yu, Dapeng; Lee, Chun‐Sing; Bello, I.; Sun, Xun; Tang, Yaqin; Zhou, Guangwen; Bai, Z. G.; Zhang, Z.; Feng, Sun

doi:10.1016/s0038-1098(97)10143-0

Cited by 179 publications

(68 citation statements)

References 11 publications

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“…The nanowire products covered approximately 30 mm in length of the Si substrate. The Si nanowires formed in this zone have been intensively studied previously by Lee et al 11,[14][15][16]18 Under optical microscopy, zone IV can be clearly divided into two regions with almost equal length by the color and morphology of the wires. In the front region (the corresponding temperature range is 1050-1180°C), light yellow nanowires closely attach to the surface of Si substrate to form a nanowire film.…”

Section: Zone IV (930-1180°c)mentioning

confidence: 99%

“…1 Consequently, a great deal of effort has been made in fabricating Si-based nanostructures, especially Si nanowires. Several techniques have been developed to produce Si nanowires, including lithography and etching, [2][3][4] scanning tunneling microscopy, 5,6 vapor-liquid-solid (VLS) growth, [7][8][9][10] laser ablation of metalcontaining Si target [11][12][13][14] or metal-free Si/SiO 2 target, 11,15 and thermal evaporation of Si-SiO 2 mixture 11,16,17 or SiO powders. 11,18 Among these techniques, the thermal evaporation technique developed by Lee et al 11 is of particular interest and has attracted much attention in recent years due to its low cost and ease of manufacture.…”

Section: Introductionmentioning

confidence: 99%

“…The quality of the Si nanowires produced by this technique is comparable to those produced by traditional VLS [7][8][9][10] and laser ablation. [11][12][13][14][15] In thermal evaporation, oxides were found to play a dominant role in the nucleation and growth of Si nanowires. The growth mechanism of Si nanowires from thermal evaporation of SiO powders, however, is not fully understood.…”

Section: Introductionmentioning

confidence: 99%

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Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders

et al. 2001

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Silicon-based nanostructures with different morphologies, sizes, compositions, and microstructures were grown on Si wafers by thermal evaporation of SiO powders at 1350°C for 5 h under 300 Torr of a flowing gas mixture of 5% H 2-Ar at a flow rate of 50 standard cubic centimeters per minute (sccm). The SiO powders and Si wafers were placed inside an alumina tube, which was heated by a tube furnace. The local temperature inside the tube was carefully calibrated by a thermal couple. After evaporation, Si-containing products with different colors and appearances were formed on the surfaces of the Si wafers over a wide temperature range of 890-1320°C and a long distance of ∼85 mm. Basing on the colors and appearances of the products, five distinct zones, which corresponding to different temperature ranges, were clearly identified from the highest temperature of 1320°C to the lowest temperature of 890°C. They are zone I (1250-1320°C), zone II (1230-1250°C), zone III (1180-1230°C), zone IV (930-1180°C), and zone V (890-930°C). The deposited products were systematically studied by scanning electron microscopy, transmission electron microscopy, and X-ray diffraction. The results show that, besides Si nanowires, many other kinds of Si-based nanostructures such as octopuslike, pinlike, tadpolelike, and chainlike structures were also formed. The temperature distribution inside the alumina tube was found to play a dominant role on the formation of these structures. It is demonstrated that a control over the growth temperature can precisely control the morphologies and intrinsic structures of the silicon-based nanomaterials. This is an important step toward design and control of nanostructures. The growth mechanisms of these products were briefly discussed.

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Section: Zone IV (930-1180°c)mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders

et al. 2001

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“…Actually polycrystalline silicon has a similar crystal structure and SAED pattern with interplane spacings of 3.1 and 1.9 Å corresponding to (111) and (220) lattice planes. 6 According to the Mg-Si phase diagram, the Mg 2 Si phase is stable up to >1000 o C. 7 In this context, annealing of the film at 500 o C might not cause the phase change. It is thus obvious that the isolated Si is not caused by segregation from Mg 2 Si during annealing but was already present in the film as prepared, and was undetectable by XRD.…”

Section: Resultsmentioning

confidence: 99%

Amorphous and nanocrystalline Mg2Si thin-film electrodes

Song

Striebel

Song

et al. 2003

Journal of Power Sources

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Mg 2 Si films, prepared by pulsed laser deposition (PLD), were amorphous, as prepared, and nanocrystalline following annealing. Their micro-structure and electrochemical characteristics were studied by high resolution transmission electron microscopy (HRTEM) and electrochemical cycling against lithium. HRTEM analysis revealed that some excess Si was present in the films. The more amorphous thinner film exhibited excellent cyclability. However, when the film becomes crystalline, the irreversible capacity loss was more significant during the initial cycling and after ∼50 cycles.Interpretations of the superior stability of the amorphous films are examined.

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“…Silicon nanowires (SiNWs) are attractive nanomaterials because of their compatibility to state-of-the-art integrated circuit technology [1,2].…”

mentioning

confidence: 99%

Growth of p-type Si nanotubes by catalytic plasma treatments

Xie¹,

Wang²,

Fan³

et al. 2008

Nanotechnology

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We have demonstrated a new technique to transform bulk materials into one-dimensional nanostructures. We have shown that p-type Si nanotubes (SiNTs) can be grown by a simple dual RF plasma treatment of p-type Si substrates at 500• C. These SiNTs have diameters of ∼50-80 nm with tubular wall thickness of ∼10-15 nm. The use of Cu vapor and reactive plasma has enabled the growth of these SiNTs instead of Si nanowires.

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Synthesis of nano-scale silicon wires by excimer laser ablation at high temperature

Cited by 179 publications

References 11 publications

Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders

Temperature-Controlled Growth of Silicon-Based Nanostructures by Thermal Evaporation of SiO Powders

Amorphous and nanocrystalline Mg2Si thin-film electrodes

Growth of p-type Si nanotubes by catalytic plasma treatments

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