Synthesis of <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" id="M1"><mml:mrow><mml:msub><mml:mrow><mml:mtext>ReN</mml:mtext></mml:mrow><mml:mrow><mml:mtext>3</mml:mtext></mml:mrow></mml:msub></mml:mrow></mml:math> Thin Films by Magnetron Sputtering

Soto, G.; Tiznado, H.; Cruz, W. De La; Reyes, A.

doi:10.1155/2014/745736

Cited by 5 publications

(7 citation statements)

References 27 publications

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“…Hitherto, ReN 3 with the orthorhombic symmetry Ama 2 has the highest known nitrogen content for the Re−N system. It was synthesized in the form of thin films by reactive magnetron sputtering . There are a number of theoretically predicted nitrogen‐rich compounds, that can have similar (ReN 3 ( Imm 2)) or even higher nitrogen content, ReN 4 ( Pbca , Cmmm ).…”

Section: Figurementioning

confidence: 99%

High‐Pressure Synthesis of a Nitrogen‐Rich Inclusion Compound ReN₈⋅x N₂ with Conjugated Polymeric Nitrogen Chains

et al. 2018

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A nitrogen-rich compound, ReN ⋅x N , was synthesized by a direct reaction between rhenium and nitrogen at high pressure and high temperature in a laser-heated diamond anvil cell. Single-crystal X-ray diffraction revealed that the crystal structure, which is based on the ReN framework, has rectangular-shaped channels that accommodate nitrogen molecules. Thus, despite a very high synthesis pressure, exceeding 100 GPa, ReN ⋅x N is an inclusion compound. The amount of trapped nitrogen (x) depends on the synthesis conditions. The polydiazenediyl chains [-N=N-] that constitute the framework have not been previously observed in any compound. Ab initio calculations on ReN ⋅x N provide strong support for the experimental results and conclusions.

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Section: Figurementioning

confidence: 99%

High‐Pressure Synthesis of a Nitrogen‐Rich Inclusion Compound ReN₈⋅x N₂ with Conjugated Polymeric Nitrogen Chains

et al. 2018

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“…These techniques include chemical vapor deposition (CVD), chemical vapor infiltration (CVI), pulsed laser evaporation (PLE), electron‐beam evaporation, electrodeposition, molecular beam epitaxy (MBE), and magnetron sputtering . Even more limited has been the preparation of rhenium nitrides which have been synthesized by sputtering, ion implantation, pulsed laser deposition, and high‐pressure solid‐state metathesis . There is thus still room for introducing new methods for preparing these intriguing refractory/noble metal materials to make them more widely available for various applications using highly controllable methods with moderate deposition conditions.…”

Section: Figurementioning

confidence: 99%

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

et al. 2018

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Rhenium is both a refractory metal and a noble metal that has attractive properties for various applications. Still, synthesis and applications of rhenium thin films have been limited. We introduce herein the growth of both rhenium metal and rhenium nitride thin films by the technologically important atomic layer deposition (ALD) method over a wide deposition temperature range using fast, simple, and robust surface reactions between rhenium pentachloride and ammonia. Films are grown and characterized for compositions, surface morphologies and roughnesses, crystallinities, and resistivities. Conductive rhenium subnitride films of tunable composition are obtained at deposition temperatures between 275 and 375 °C, whereas pure rhenium metal films grow at 400 °C and above. Even a just 3 nm thick rhenium film is continuous and has a low resistivity of about 90 μΩ cm showing potential for applications for which also other noble metals and refractory metals have been considered.

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“…Advances have been achieved by theoretically and experimentally exploring ReC x and ReN x compounds. Further investigation of ReN x compounds [7][8][9][10][11] drove the field toward the synthesis of Re 2 N [7], Re 3 N, ReN 3 [9], the prediction of ReN 2 [8] and its synthesis [9]. In parallel, ReC x have been explored through the synthesis of Re 2 C [12] and quantum-chemical calculations of ReC 2 [13].…”

Section: Introductionmentioning

confidence: 99%

Electronic structure calculations for rhenium carbonitride: an extended Hückel tight-binding study

et al. 2018

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Effective theoretical models are needed to predict the physical properties of materials. Here we discuss the electronic structure of rhenium carbonitride (ReCN) in terms of tight-binding. The extended Hückel tight-binding (EHTB) formalism was employed to calculate the band structure, density of states (DOS) and investigate the chemical bonding properties as well as the crystal field splitting (CFS) of d orbitals in the Re atom. Two ReCN structures were studied, characterized by space groups P63mc and P3m1, respectively. The calculated energy bands and DOS depict semiconductor properties for both structures, seeing an indirect band-gap of 0.62 eV in P63mc (M−K ) while a direct band-gap of 0.49 eV is seen in P3m1 at (H). Mulliken population and CFS analysis were done to gain insight into the filling of 5d orbitals in ReCN, crystallographical differences between the two crystal structures and their physical implications. The five-fold degenerate energy levels in both the P63mc and P3m1 structures are broken by a tetragonal crystal electric field. The P63mc structure undergoes Peierls distortion, resulting in a loss of symmetry. The EHTB method is an effective tool to approximate the physical and chemical properties of novel materials such as ReCN at a low computational cost and in terms of a simple quantum-mechanical framework, understood by the broader community. The EHTB model for ReCN will serve as a benchmark and starting point for future studies on the compound within similar contexts.

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Synthesis of ReN3 Thin Films by Magnetron Sputtering

Cited by 5 publications

References 27 publications

High‐Pressure Synthesis of a Nitrogen‐Rich Inclusion Compound ReN₈⋅x N₂ with Conjugated Polymeric Nitrogen Chains

High‐Pressure Synthesis of a Nitrogen‐Rich Inclusion Compound ReN₈⋅x N₂ with Conjugated Polymeric Nitrogen Chains

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

Electronic structure calculations for rhenium carbonitride: an extended Hückel tight-binding study

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Synthesis of ReN3 Thin Films by Magnetron Sputtering

Cited by 5 publications

References 27 publications

High‐Pressure Synthesis of a Nitrogen‐Rich Inclusion Compound ReN8⋅x N2 with Conjugated Polymeric Nitrogen Chains

High‐Pressure Synthesis of a Nitrogen‐Rich Inclusion Compound ReN8⋅x N2 with Conjugated Polymeric Nitrogen Chains

Rhenium Metal and Rhenium Nitride Thin Films Grown by Atomic Layer Deposition

Electronic structure calculations for rhenium carbonitride: an extended Hückel tight-binding study

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High‐Pressure Synthesis of a Nitrogen‐Rich Inclusion Compound ReN₈⋅x N₂ with Conjugated Polymeric Nitrogen Chains

High‐Pressure Synthesis of a Nitrogen‐Rich Inclusion Compound ReN₈⋅x N₂ with Conjugated Polymeric Nitrogen Chains